150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers

A rating voltage of 150 and 200 V split-gate trench (SGT) power metal-oxide- semiconductor field-effect transistor (Power MOSFET) with different epitaxial layers was proposed and studied. In order to reduce the specific on-resistance (R<sub>on,sp</sub>) of a 150 and 200 V SGT power MOSFE...

Full description

Bibliographic Details
Main Authors: Feng-Tso Chien, Zhi-Zhe Wang, Cheng-Li Lin, Tsung-Kuei Kang, Chii-Wen Chen, Hsien-Chin Chiu
Format: Article
Language:English
Published: MDPI AG 2020-05-01
Series:Micromachines
Subjects:
Online Access:https://www.mdpi.com/2072-666X/11/5/504

Similar Items