Hybrid Nanostructures Based of Ta2O5-PMMA for Electronic Applications
The scientific interest on hybrid materials is mainly related to understanding the types of interactions between inorganic and organic component and the effect of these interactions on the properties of the new material formed. Hybrid nanostructured materials and especially dielectrics are used for...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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Galati University Press
2023-12-01
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| Series: | The Annals of “Dunarea de Jos” University of Galati. Fascicle IX, Metallurgy and Materials Science |
| Subjects: | |
| Online Access: | https://www.gup.ugal.ro/ugaljournals/index.php/mms/article/view/6510 |
| _version_ | 1797283621084594176 |
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| author | Elena Emanuela HERBEI Claudiu-Ionuț VASILE |
| author_facet | Elena Emanuela HERBEI Claudiu-Ionuț VASILE |
| author_sort | Elena Emanuela HERBEI |
| collection | DOAJ |
| description | The scientific interest on hybrid materials is mainly related to understanding the types of interactions between inorganic and organic component and the effect of these interactions on the properties of the new material formed. Hybrid nanostructured materials and especially dielectrics are used for electronics (for gate layer) and especially those applicable in structure of different types of thin film transistors (TFTs).
In this paper is presented the research on thin film hybrid materials based on tantalum oxide (Ta2O5) starting with inorganic precursor - tantalum ethoxide and polymethylmethacrylate (PMMA). The chemical method sol -gel involves the precursor-tantalum ethoxide which is hydrolysed and functionalized (with special siloxane compound), and the organic methyl methacrylate monomer. The chemical reactions take place at low temperature below 160 oC. The sol is deposited as thin films by spin-coating to analyse intensity-voltage (I-V) and capacitance-voltage curves (C-V) to determine the electric properties. Metal-Insulator-Metal (MIM) structures were made-up for electric characterisation. The value of leakage currents was between 10-10 - 10-7 A at ± 40 V. The hybrid films were analysed by scanning electron microscopy (SEM) for thickness and morphology and for thermal stability the sol was investigated by TG and DSC.
The dielectric permittivity ranges between 3.5 and 4 at 1 MHz, depending on the tantalum alkoxide: MMA molar ratio, showing good behaviour for gate layer in future TFTs. |
| first_indexed | 2024-03-07T17:33:19Z |
| format | Article |
| id | doaj.art-c1f821a432e24a68afc6811338c1034b |
| institution | Directory Open Access Journal |
| issn | 2668-4748 2668-4756 |
| language | English |
| last_indexed | 2024-03-07T17:33:19Z |
| publishDate | 2023-12-01 |
| publisher | Galati University Press |
| record_format | Article |
| series | The Annals of “Dunarea de Jos” University of Galati. Fascicle IX, Metallurgy and Materials Science |
| spelling | doaj.art-c1f821a432e24a68afc6811338c1034b2024-03-02T17:28:22ZengGalati University PressThe Annals of “Dunarea de Jos” University of Galati. Fascicle IX, Metallurgy and Materials Science2668-47482668-47562023-12-014649710110.35219/mms.2023.4.176510Hybrid Nanostructures Based of Ta2O5-PMMA for Electronic ApplicationsElena Emanuela HERBEI0Claudiu-Ionuț VASILE1“Dunarea de Jos” University of Galati, Romania“Dunarea de Jos” University of Galati, Romania; 3Department of Psychiatry, “Elisabeta Doamna” Psychiatric Hospital, 8001 79, Galaţi, RomaniaThe scientific interest on hybrid materials is mainly related to understanding the types of interactions between inorganic and organic component and the effect of these interactions on the properties of the new material formed. Hybrid nanostructured materials and especially dielectrics are used for electronics (for gate layer) and especially those applicable in structure of different types of thin film transistors (TFTs). In this paper is presented the research on thin film hybrid materials based on tantalum oxide (Ta2O5) starting with inorganic precursor - tantalum ethoxide and polymethylmethacrylate (PMMA). The chemical method sol -gel involves the precursor-tantalum ethoxide which is hydrolysed and functionalized (with special siloxane compound), and the organic methyl methacrylate monomer. The chemical reactions take place at low temperature below 160 oC. The sol is deposited as thin films by spin-coating to analyse intensity-voltage (I-V) and capacitance-voltage curves (C-V) to determine the electric properties. Metal-Insulator-Metal (MIM) structures were made-up for electric characterisation. The value of leakage currents was between 10-10 - 10-7 A at ± 40 V. The hybrid films were analysed by scanning electron microscopy (SEM) for thickness and morphology and for thermal stability the sol was investigated by TG and DSC. The dielectric permittivity ranges between 3.5 and 4 at 1 MHz, depending on the tantalum alkoxide: MMA molar ratio, showing good behaviour for gate layer in future TFTs.https://www.gup.ugal.ro/ugaljournals/index.php/mms/article/view/6510hybrid materialsspin-coatingtantalum oxidepmma |
| spellingShingle | Elena Emanuela HERBEI Claudiu-Ionuț VASILE Hybrid Nanostructures Based of Ta2O5-PMMA for Electronic Applications The Annals of “Dunarea de Jos” University of Galati. Fascicle IX, Metallurgy and Materials Science hybrid materials spin-coating tantalum oxide pmma |
| title | Hybrid Nanostructures Based of Ta2O5-PMMA for Electronic Applications |
| title_full | Hybrid Nanostructures Based of Ta2O5-PMMA for Electronic Applications |
| title_fullStr | Hybrid Nanostructures Based of Ta2O5-PMMA for Electronic Applications |
| title_full_unstemmed | Hybrid Nanostructures Based of Ta2O5-PMMA for Electronic Applications |
| title_short | Hybrid Nanostructures Based of Ta2O5-PMMA for Electronic Applications |
| title_sort | hybrid nanostructures based of ta2o5 pmma for electronic applications |
| topic | hybrid materials spin-coating tantalum oxide pmma |
| url | https://www.gup.ugal.ro/ugaljournals/index.php/mms/article/view/6510 |
| work_keys_str_mv | AT elenaemanuelaherbei hybridnanostructuresbasedofta2o5pmmaforelectronicapplications AT claudiuionutvasile hybridnanostructuresbasedofta2o5pmmaforelectronicapplications |