Static and Dynamic Radiation Damage of Silicon Carbide VDMOS and Their Comparison

Static and Dynamic Radiation Damage of Silicon Carbide VDMOS and Their Comparison

The dynamic characteristics of silicon carbide VDMOS (SiC VDMOS) with different bias states under total dose radiation environment were studied. The effects of 60Co γ�ray irradiation on the threshold voltage and switching characteristics of SiC VDMOS with three bias states were compared. The maximu...

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Bibliographic Details
Main Author: FENG Haonan;YANG Sheng;LIANG Xiaowen;ZHANG Dan;PU Xiaojuan;SUN Jing;WEI Ying;CUI Jiangwei;LI Yudong;YU Xuefeng;GUO Qi
Format: Article
Language:English
Published: Editorial Board of Atomic Energy Science and Technology 2022-04-01
Series:Yuanzineng kexue jishu
Subjects:
silicon carbide
total ionizing dose effect
static parameter
dynamic characteristic
depletion layer
Online Access:https://www.aest.org.cn/CN/abstract/abstract21390.shtml

Internet

https://www.aest.org.cn/CN/abstract/abstract21390.shtml

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