Probing two-level systems with electron spin inversion recovery of defects at the Si/SiO_{2} interface
The main feature of amorphous materials is the presence of excess vibrational modes at low energies, giving rise to the so-called “boson peak” in neutron and optical spectroscopies. These same modes manifest themselves as two-level systems (TLSs) causing noise and decoherence in qubits and other sen...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
American Physical Society
2020-09-01
|
| Series: | Physical Review Research |
| Online Access: | http://doi.org/10.1103/PhysRevResearch.2.033507 |
| _version_ | 1797211291470790656 |
|---|---|
| author | M. Belli M. Fanciulli R. de Sousa |
| author_facet | M. Belli M. Fanciulli R. de Sousa |
| author_sort | M. Belli |
| collection | DOAJ |
| description | The main feature of amorphous materials is the presence of excess vibrational modes at low energies, giving rise to the so-called “boson peak” in neutron and optical spectroscopies. These same modes manifest themselves as two-level systems (TLSs) causing noise and decoherence in qubits and other sensitive devices. Here, we present an experiment that uses the spin relaxation of dangling bonds at the Si/(amorphous)SiO_{2} interface as a probe of TLSs. We introduce a model that is able to explain the observed nonexponential electron spin inversion recovery and provides a measure of the degree of spatial localization and concentration of the TLSs close to the interface, their maximum energy, and its temperature dependence. |
| first_indexed | 2024-04-24T10:24:09Z |
| format | Article |
| id | doaj.art-c2073a3c0a0f4dc097ba4c2fcd6ccdd8 |
| institution | Directory Open Access Journal |
| issn | 2643-1564 |
| language | English |
| last_indexed | 2024-04-24T10:24:09Z |
| publishDate | 2020-09-01 |
| publisher | American Physical Society |
| record_format | Article |
| series | Physical Review Research |
| spelling | doaj.art-c2073a3c0a0f4dc097ba4c2fcd6ccdd82024-04-12T17:01:24ZengAmerican Physical SocietyPhysical Review Research2643-15642020-09-012303350710.1103/PhysRevResearch.2.033507Probing two-level systems with electron spin inversion recovery of defects at the Si/SiO_{2} interfaceM. BelliM. FanciulliR. de SousaThe main feature of amorphous materials is the presence of excess vibrational modes at low energies, giving rise to the so-called “boson peak” in neutron and optical spectroscopies. These same modes manifest themselves as two-level systems (TLSs) causing noise and decoherence in qubits and other sensitive devices. Here, we present an experiment that uses the spin relaxation of dangling bonds at the Si/(amorphous)SiO_{2} interface as a probe of TLSs. We introduce a model that is able to explain the observed nonexponential electron spin inversion recovery and provides a measure of the degree of spatial localization and concentration of the TLSs close to the interface, their maximum energy, and its temperature dependence.http://doi.org/10.1103/PhysRevResearch.2.033507 |
| spellingShingle | M. Belli M. Fanciulli R. de Sousa Probing two-level systems with electron spin inversion recovery of defects at the Si/SiO_{2} interface Physical Review Research |
| title | Probing two-level systems with electron spin inversion recovery of defects at the Si/SiO_{2} interface |
| title_full | Probing two-level systems with electron spin inversion recovery of defects at the Si/SiO_{2} interface |
| title_fullStr | Probing two-level systems with electron spin inversion recovery of defects at the Si/SiO_{2} interface |
| title_full_unstemmed | Probing two-level systems with electron spin inversion recovery of defects at the Si/SiO_{2} interface |
| title_short | Probing two-level systems with electron spin inversion recovery of defects at the Si/SiO_{2} interface |
| title_sort | probing two level systems with electron spin inversion recovery of defects at the si sio 2 interface |
| url | http://doi.org/10.1103/PhysRevResearch.2.033507 |
| work_keys_str_mv | AT mbelli probingtwolevelsystemswithelectronspininversionrecoveryofdefectsatthesisio2interface AT mfanciulli probingtwolevelsystemswithelectronspininversionrecoveryofdefectsatthesisio2interface AT rdesousa probingtwolevelsystemswithelectronspininversionrecoveryofdefectsatthesisio2interface |