Probing two-level systems with electron spin inversion recovery of defects at the Si/SiO_{2} interface
The main feature of amorphous materials is the presence of excess vibrational modes at low energies, giving rise to the so-called “boson peak” in neutron and optical spectroscopies. These same modes manifest themselves as two-level systems (TLSs) causing noise and decoherence in qubits and other sen...
Main Authors: | M. Belli, M. Fanciulli, R. de Sousa |
---|---|
Format: | Article |
Language: | English |
Published: |
American Physical Society
2020-09-01
|
Series: | Physical Review Research |
Online Access: | http://doi.org/10.1103/PhysRevResearch.2.033507 |
Similar Items
-
Exciton formation dynamics at the SiO2/Si interface
by: Sergio Revuelta, et al.
Published: (2023-11-01) -
Electronic structure at realistic Si(100)-SiO2 interfaces
by: Giustino, F, et al.
Published: (2004) -
Atomic-scale modelling of the Si(100)-SiO(2) interface
by: Giustino, F, et al.
Published: (2005) -
Abrupt model interface for the 4H(1000)SiC-SiO2 interface
by: Devynck, F, et al.
Published: (2005) -
Proton-induced fixed positive charge at the Si(100)-SiO2 interface.
by: Godet, J, et al.
Published: (2007)