Intensity determination of the scattering rates in the monolayer graphene

Intensity determination of the scattering rates in the monolayer graphene

The results of simulation of the electron scattering rates in a single graphene layer without substrate are presented. High mobility of charge carriers, maximally obtained among all known materials, makes graphene a promising material for the creation of new semiconductor devices with good output ch...

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Bibliographic Details
Main Authors: V. V. Murav'ev, V. N. Mishchenka
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2019-06-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:
graphene
semiconductor structure
scattering rates
electron transport processes
monte carlo method
Online Access:https://doklady.bsuir.by/jour/article/view/903

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