Robust formation of amorphous Sb2S3 on functionalized graphene for high-performance optoelectronic devices in the cyan-gap
Abstract Despite significant progress in the fabrication and application of semiconductor materials for optical emitters and sensors, few materials can cover the cyan-gap between 450 and 500 nm. We here introduce a robust and facile method to deposit amorphous Sb2S3 films with a bandgap of 2.8 eV. B...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2020-09-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-020-70879-1 |
| _version_ | 1818570585316261888 |
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| author | Ju-Hung Chen Sheng-Kuei Chiu Jin-De Luo Shu-Yu Huang Hsiang-An Ting Mario Hofmann Ya-Ping Hsieh Chu-Chi Ting |
| author_facet | Ju-Hung Chen Sheng-Kuei Chiu Jin-De Luo Shu-Yu Huang Hsiang-An Ting Mario Hofmann Ya-Ping Hsieh Chu-Chi Ting |
| author_sort | Ju-Hung Chen |
| collection | DOAJ |
| description | Abstract Despite significant progress in the fabrication and application of semiconductor materials for optical emitters and sensors, few materials can cover the cyan-gap between 450 and 500 nm. We here introduce a robust and facile method to deposit amorphous Sb2S3 films with a bandgap of 2.8 eV. By exploiting the tunable functionality of graphene, a two-dimensional material, efficient deposition from a chemical was achieved. Ozone-generated defects in the graphene were shown to be required to enhance the morphology and quality of the material and comprehensive characterization of the seed layer and the Sb2S3 film were applied to design an optimal deposition process. The resulting material exhibits efficient carrier transport and high photodetector performance as evidenced by unprecedented responsivity and detectivity in semiconductor/graphene/glass vertical heterostructures. (112 A/W, 2.01 × 1012 Jones, respectively). |
| first_indexed | 2024-12-14T13:43:54Z |
| format | Article |
| id | doaj.art-c2170220d4b54666a5f2e8becd189d46 |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-12-14T13:43:54Z |
| publishDate | 2020-09-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-c2170220d4b54666a5f2e8becd189d462022-12-21T22:59:22ZengNature PortfolioScientific Reports2045-23222020-09-011011810.1038/s41598-020-70879-1Robust formation of amorphous Sb2S3 on functionalized graphene for high-performance optoelectronic devices in the cyan-gapJu-Hung Chen0Sheng-Kuei Chiu1Jin-De Luo2Shu-Yu Huang3Hsiang-An Ting4Mario Hofmann5Ya-Ping Hsieh6Chu-Chi Ting7Graduate Institute of Opto-Mechatronics, Department of Mechanical Engineering, National Chung Cheng UniversityInstitute of Atomic and Molecular Sciences, Academia SinicaGraduate Institute of Opto-Mechatronics, Department of Mechanical Engineering, National Chung Cheng UniversityGraduate Institute of Opto-Mechatronics, Department of Mechanical Engineering, National Chung Cheng UniversityDepartment of Mechanical Engineering, National Chiao Tung UniversityDepartment of Physics, National Taiwan UniversityInstitute of Atomic and Molecular Sciences, Academia SinicaGraduate Institute of Opto-Mechatronics, Department of Mechanical Engineering, National Chung Cheng UniversityAbstract Despite significant progress in the fabrication and application of semiconductor materials for optical emitters and sensors, few materials can cover the cyan-gap between 450 and 500 nm. We here introduce a robust and facile method to deposit amorphous Sb2S3 films with a bandgap of 2.8 eV. By exploiting the tunable functionality of graphene, a two-dimensional material, efficient deposition from a chemical was achieved. Ozone-generated defects in the graphene were shown to be required to enhance the morphology and quality of the material and comprehensive characterization of the seed layer and the Sb2S3 film were applied to design an optimal deposition process. The resulting material exhibits efficient carrier transport and high photodetector performance as evidenced by unprecedented responsivity and detectivity in semiconductor/graphene/glass vertical heterostructures. (112 A/W, 2.01 × 1012 Jones, respectively).https://doi.org/10.1038/s41598-020-70879-1 |
| spellingShingle | Ju-Hung Chen Sheng-Kuei Chiu Jin-De Luo Shu-Yu Huang Hsiang-An Ting Mario Hofmann Ya-Ping Hsieh Chu-Chi Ting Robust formation of amorphous Sb2S3 on functionalized graphene for high-performance optoelectronic devices in the cyan-gap Scientific Reports |
| title | Robust formation of amorphous Sb2S3 on functionalized graphene for high-performance optoelectronic devices in the cyan-gap |
| title_full | Robust formation of amorphous Sb2S3 on functionalized graphene for high-performance optoelectronic devices in the cyan-gap |
| title_fullStr | Robust formation of amorphous Sb2S3 on functionalized graphene for high-performance optoelectronic devices in the cyan-gap |
| title_full_unstemmed | Robust formation of amorphous Sb2S3 on functionalized graphene for high-performance optoelectronic devices in the cyan-gap |
| title_short | Robust formation of amorphous Sb2S3 on functionalized graphene for high-performance optoelectronic devices in the cyan-gap |
| title_sort | robust formation of amorphous sb2s3 on functionalized graphene for high performance optoelectronic devices in the cyan gap |
| url | https://doi.org/10.1038/s41598-020-70879-1 |
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