A Regulated Temperature-Insensitive High-Voltage Charge Pump in Standard CMOS Process for Micromachined Gyroscopes
Micromachined gyroscopes require high voltage (HV) for actuation and detection to improve its precision, but the deviation of the HV caused by temperature fluctuations will degrade the sensor’s performance. In this paper, a high-voltage temperature-insensitive charge pump is proposed. With...
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MDPI AG
2019-09-01
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| Series: | Sensors |
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| Online Access: | https://www.mdpi.com/1424-8220/19/19/4149 |
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| author | Xiang Li Rui Li Chunge Ju Bo Hou Qi Wei Bin Zhou Zhiyong Chen Rong Zhang |
| author_facet | Xiang Li Rui Li Chunge Ju Bo Hou Qi Wei Bin Zhou Zhiyong Chen Rong Zhang |
| author_sort | Xiang Li |
| collection | DOAJ |
| description | Micromachined gyroscopes require high voltage (HV) for actuation and detection to improve its precision, but the deviation of the HV caused by temperature fluctuations will degrade the sensor’s performance. In this paper, a high-voltage temperature-insensitive charge pump is proposed. Without adopting BCD (bipolar-CMOS-DMOS) technology, the output voltage can be boosted over the breakdown voltage of n-well/substrate diode using triple-well NMOS (n-type metal-oxide-semiconductor) transistors. By controlling the pumping clock’s amplitude continuously, closed-loop regulation is realized to reduce the output voltage’s sensitivity to temperature changes. Besides, the output level is programmable linearly in a large range by changing the reference voltage. The whole circuit has been fabricated in a 0.18-<inline-formula> <math display="inline"> <semantics> <mi mathvariant="sans-serif">μ</mi> </semantics> </math> </inline-formula>m standard CMOS (complementary metal-oxide-semiconductor) process with a total area of 2.53 mm<inline-formula> <math display="inline"> <semantics> <msup> <mrow></mrow> <mn>2</mn> </msup> </semantics> </math> </inline-formula>. Measurements indicate that its output voltage has a linear adjustable range from around 13 V to 16.95 V, and temperature tests show that the maximum variations of the output voltage at <inline-formula> <math display="inline"> <semantics> <mrow> <mo>−</mo> <mn>40</mn> <mo>∼</mo> <mn>80</mn> <msup> <mspace width="4pt"></mspace> <mo>∘</mo> </msup> <mi mathvariant="normal">C</mi> </mrow> </semantics> </math> </inline-formula> are less than 1.1%. |
| first_indexed | 2024-04-11T11:00:01Z |
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| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-04-11T11:00:01Z |
| publishDate | 2019-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-c23b2fb18c6c4b9298905b0e9476ca302022-12-22T04:28:38ZengMDPI AGSensors1424-82202019-09-011919414910.3390/s19194149s19194149A Regulated Temperature-Insensitive High-Voltage Charge Pump in Standard CMOS Process for Micromachined GyroscopesXiang Li0Rui Li1Chunge Ju2Bo Hou3Qi Wei4Bin Zhou5Zhiyong Chen6Rong Zhang7Department of Precision Instruments, Tsinghua University, Beijing 100084, ChinaDepartment of Precision Instruments, Tsinghua University, Beijing 100084, ChinaDepartment of Precision Instruments, Tsinghua University, Beijing 100084, ChinaDepartment of Precision Instruments, Tsinghua University, Beijing 100084, ChinaDepartment of Precision Instruments, Tsinghua University, Beijing 100084, ChinaDepartment of Precision Instruments, Tsinghua University, Beijing 100084, ChinaDepartment of Precision Instruments, Tsinghua University, Beijing 100084, ChinaDepartment of Precision Instruments, Tsinghua University, Beijing 100084, ChinaMicromachined gyroscopes require high voltage (HV) for actuation and detection to improve its precision, but the deviation of the HV caused by temperature fluctuations will degrade the sensor’s performance. In this paper, a high-voltage temperature-insensitive charge pump is proposed. Without adopting BCD (bipolar-CMOS-DMOS) technology, the output voltage can be boosted over the breakdown voltage of n-well/substrate diode using triple-well NMOS (n-type metal-oxide-semiconductor) transistors. By controlling the pumping clock’s amplitude continuously, closed-loop regulation is realized to reduce the output voltage’s sensitivity to temperature changes. Besides, the output level is programmable linearly in a large range by changing the reference voltage. The whole circuit has been fabricated in a 0.18-<inline-formula> <math display="inline"> <semantics> <mi mathvariant="sans-serif">μ</mi> </semantics> </math> </inline-formula>m standard CMOS (complementary metal-oxide-semiconductor) process with a total area of 2.53 mm<inline-formula> <math display="inline"> <semantics> <msup> <mrow></mrow> <mn>2</mn> </msup> </semantics> </math> </inline-formula>. Measurements indicate that its output voltage has a linear adjustable range from around 13 V to 16.95 V, and temperature tests show that the maximum variations of the output voltage at <inline-formula> <math display="inline"> <semantics> <mrow> <mo>−</mo> <mn>40</mn> <mo>∼</mo> <mn>80</mn> <msup> <mspace width="4pt"></mspace> <mo>∘</mo> </msup> <mi mathvariant="normal">C</mi> </mrow> </semantics> </math> </inline-formula> are less than 1.1%.https://www.mdpi.com/1424-8220/19/19/4149high-voltage generationregulated charge pumptemperature-insensitivetriple-well nmos transistorstandard cmos process |
| spellingShingle | Xiang Li Rui Li Chunge Ju Bo Hou Qi Wei Bin Zhou Zhiyong Chen Rong Zhang A Regulated Temperature-Insensitive High-Voltage Charge Pump in Standard CMOS Process for Micromachined Gyroscopes Sensors high-voltage generation regulated charge pump temperature-insensitive triple-well nmos transistor standard cmos process |
| title | A Regulated Temperature-Insensitive High-Voltage Charge Pump in Standard CMOS Process for Micromachined Gyroscopes |
| title_full | A Regulated Temperature-Insensitive High-Voltage Charge Pump in Standard CMOS Process for Micromachined Gyroscopes |
| title_fullStr | A Regulated Temperature-Insensitive High-Voltage Charge Pump in Standard CMOS Process for Micromachined Gyroscopes |
| title_full_unstemmed | A Regulated Temperature-Insensitive High-Voltage Charge Pump in Standard CMOS Process for Micromachined Gyroscopes |
| title_short | A Regulated Temperature-Insensitive High-Voltage Charge Pump in Standard CMOS Process for Micromachined Gyroscopes |
| title_sort | regulated temperature insensitive high voltage charge pump in standard cmos process for micromachined gyroscopes |
| topic | high-voltage generation regulated charge pump temperature-insensitive triple-well nmos transistor standard cmos process |
| url | https://www.mdpi.com/1424-8220/19/19/4149 |
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