Modulating intrinsic anomalous Hall effect in Fe3GeTe2 monolayer via strain engineering
The Fe3GeTe2 monolayer, a ferromagnetic topological candidate with a high Curie temperature of 130 K, has recently garnered considerable interest. We investigated the impact of strain on the electronic, magnetic, and topological properties of the Fe3GeTe2 monolayer using density functional theory ca...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0164670 |
| _version_ | 1827767800519720960 |
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| author | Min Guo Ju Zhou Hai-Shuang Lu Sheng Ju Tian-Yi Cai |
| author_facet | Min Guo Ju Zhou Hai-Shuang Lu Sheng Ju Tian-Yi Cai |
| author_sort | Min Guo |
| collection | DOAJ |
| description | The Fe3GeTe2 monolayer, a ferromagnetic topological candidate with a high Curie temperature of 130 K, has recently garnered considerable interest. We investigated the impact of strain on the electronic, magnetic, and topological properties of the Fe3GeTe2 monolayer using density functional theory calculations. Our results showed that the Fe3GeTe2 monolayer was an itinerant ferromagnet with a high spin polarization of 69.93% and out-of-plane easy magnetization. Tensile strain had no profound impact on the anomalous Hall conductivity (AHC). However, when applying a compressive biaxial strain of −3%, the AHC at the Fermi level was dramatically enhanced to 1.62 e2/h, which is much larger than that of the bulk (0.7 e2/h) and bilayer (1.5 e2/h) material. The large AHC nearly coincided with the singularity of the energy bands near the M point. Our results highlight the potential of using strain engineering to control and optimize the properties of two-dimensional topological materials. |
| first_indexed | 2024-03-11T12:04:01Z |
| format | Article |
| id | doaj.art-c2745b0f06c6469d94e93618a4edc29e |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-03-11T12:04:01Z |
| publishDate | 2023-10-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-c2745b0f06c6469d94e93618a4edc29e2023-11-07T17:47:00ZengAIP Publishing LLCAIP Advances2158-32262023-10-011310105026105026-610.1063/5.0164670Modulating intrinsic anomalous Hall effect in Fe3GeTe2 monolayer via strain engineeringMin Guo0Ju Zhou1Hai-Shuang Lu2Sheng Ju3Tian-Yi Cai4Department of Physics, Soochow University, Suzhou 215006, ChinaDepartment of Physics, Soochow University, Suzhou 215006, ChinaSchool of Electronic and Information Engineering, Changshu Institute of Technology, Changshu 215500, ChinaDepartment of Physics, Soochow University, Suzhou 215006, ChinaDepartment of Physics, Soochow University, Suzhou 215006, ChinaThe Fe3GeTe2 monolayer, a ferromagnetic topological candidate with a high Curie temperature of 130 K, has recently garnered considerable interest. We investigated the impact of strain on the electronic, magnetic, and topological properties of the Fe3GeTe2 monolayer using density functional theory calculations. Our results showed that the Fe3GeTe2 monolayer was an itinerant ferromagnet with a high spin polarization of 69.93% and out-of-plane easy magnetization. Tensile strain had no profound impact on the anomalous Hall conductivity (AHC). However, when applying a compressive biaxial strain of −3%, the AHC at the Fermi level was dramatically enhanced to 1.62 e2/h, which is much larger than that of the bulk (0.7 e2/h) and bilayer (1.5 e2/h) material. The large AHC nearly coincided with the singularity of the energy bands near the M point. Our results highlight the potential of using strain engineering to control and optimize the properties of two-dimensional topological materials.http://dx.doi.org/10.1063/5.0164670 |
| spellingShingle | Min Guo Ju Zhou Hai-Shuang Lu Sheng Ju Tian-Yi Cai Modulating intrinsic anomalous Hall effect in Fe3GeTe2 monolayer via strain engineering AIP Advances |
| title | Modulating intrinsic anomalous Hall effect in Fe3GeTe2 monolayer via strain engineering |
| title_full | Modulating intrinsic anomalous Hall effect in Fe3GeTe2 monolayer via strain engineering |
| title_fullStr | Modulating intrinsic anomalous Hall effect in Fe3GeTe2 monolayer via strain engineering |
| title_full_unstemmed | Modulating intrinsic anomalous Hall effect in Fe3GeTe2 monolayer via strain engineering |
| title_short | Modulating intrinsic anomalous Hall effect in Fe3GeTe2 monolayer via strain engineering |
| title_sort | modulating intrinsic anomalous hall effect in fe3gete2 monolayer via strain engineering |
| url | http://dx.doi.org/10.1063/5.0164670 |
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