Predicting Thin Film Stoichiometry In V-O2 Reactive Sputtering
<p>The electrical, optical and mechanical properties of compound oxides film depend strongly on the composition of the film, especially for vanadium oxide thin films, since the vanadium-oxygen phase diagram includes mixed valence oxides with two or more oxidation states. Therefore, it is inter...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Kaunas University of Technology
2015-06-01
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| Series: | Medžiagotyra |
| Subjects: | |
| Online Access: | http://matsc.ktu.lt/index.php/MatSc/article/view/6910 |
| Summary: | <p>The electrical, optical and mechanical properties of compound oxides film depend strongly on the composition of the film, especially for vanadium oxide thin films, since the vanadium-oxygen phase diagram includes mixed valence oxides with two or more oxidation states. Therefore, it is interesting to predict the film stoichiometry in VO<sub>x</sub> films. However, it has not, to any great extent yet, been possible to predict the composition of vanadium oxides films. In this article, we present a model that enables us to predict film composition of vanadium oxides prepared by reactive sputtering. Based on this model, the fraction ratio of V, V<sub>2</sub>O<sub>3</sub>, VO<sub>2</sub> and V<sub>2</sub>O<sub>5</sub> in the substrate surface as a function of oxygen flow is investigated. It is concluded that the presented theoretical model for the involved reactions and composition of VO<sub>x</sub> thin film during reactive sputtering process is in qualitative agreement with the XPS results from experiment and can be used to find optimum processing conditions for deposition of films of a desired composition.</p><p>DOI: <a href="http://dx.doi.org/10.5755/j01.ms.21.2.6910">http://dx.doi.org/10.5755/j01.ms.21.2.6910</a></p> |
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| ISSN: | 1392-1320 2029-7289 |