Homogeneity- and Stoichiometry-Induced Electrical and Optical Properties of Cu-Se Thin Films by RF Sputtering Power
P-type Cu-Se thin films were deposited on glass substrates at room temperature using radio frequency magnetron sputtering by a single multi-component CuSe<sub>2</sub> target. When using a multi-component target, the impact of the sputtering power on the homogeneity and stoichiometry with...
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MDPI AG
2023-09-01
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| Online Access: | https://www.mdpi.com/1996-1944/16/18/6087 |
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| author | Sara Kim Yong-Seok Lee Nam-Hoon Kim |
| author_facet | Sara Kim Yong-Seok Lee Nam-Hoon Kim |
| author_sort | Sara Kim |
| collection | DOAJ |
| description | P-type Cu-Se thin films were deposited on glass substrates at room temperature using radio frequency magnetron sputtering by a single multi-component CuSe<sub>2</sub> target. When using a multi-component target, the impact of the sputtering power on the homogeneity and stoichiometry within the thin films should be investigated in the depth direction to demonstrate a secondary effect on the electrical and optical properties of the thin films. Systematic characterization of the Cu-Se thin films, including the morphology, microstructure, chemical composition, and depth-directional chemical bonding state and defect structure of the thin films, revealed that the sputtering power played an important role in the homogeneity and stoichiometry of the thin films. At very low and very high sputtering power levels, the Cu-Se thin films exhibited more deviations from stoichiometry, while an optimized sputtering power resulted in more homogenous thin films with improved stoichiometry across the entire thin film thickness in the X-ray photoelectron spectroscopy depth profile, despite showing Se deficiency at all depths. A rapid decrease in carrier concentration, indicating a reduction in the net effect of total defects, was obtained at the optimized sputtering power with less deviation from stoichiometry in the Cu-Se thin films and the closest stoichiometric ratio at an intermediate depth. |
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| format | Article |
| id | doaj.art-c27a7e5c429342aeb4694c075c842fee |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T22:31:24Z |
| publishDate | 2023-09-01 |
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| spelling | doaj.art-c27a7e5c429342aeb4694c075c842fee2023-11-19T11:42:41ZengMDPI AGMaterials1996-19442023-09-011618608710.3390/ma16186087Homogeneity- and Stoichiometry-Induced Electrical and Optical Properties of Cu-Se Thin Films by RF Sputtering PowerSara Kim0Yong-Seok Lee1Nam-Hoon Kim2Department of Electrical Engineering, Chosun University, Gwangju 61452, Republic of KoreaDepartment of Electrical Engineering, Chosun University, Gwangju 61452, Republic of KoreaDepartment of Electrical Engineering, Chosun University, Gwangju 61452, Republic of KoreaP-type Cu-Se thin films were deposited on glass substrates at room temperature using radio frequency magnetron sputtering by a single multi-component CuSe<sub>2</sub> target. When using a multi-component target, the impact of the sputtering power on the homogeneity and stoichiometry within the thin films should be investigated in the depth direction to demonstrate a secondary effect on the electrical and optical properties of the thin films. Systematic characterization of the Cu-Se thin films, including the morphology, microstructure, chemical composition, and depth-directional chemical bonding state and defect structure of the thin films, revealed that the sputtering power played an important role in the homogeneity and stoichiometry of the thin films. At very low and very high sputtering power levels, the Cu-Se thin films exhibited more deviations from stoichiometry, while an optimized sputtering power resulted in more homogenous thin films with improved stoichiometry across the entire thin film thickness in the X-ray photoelectron spectroscopy depth profile, despite showing Se deficiency at all depths. A rapid decrease in carrier concentration, indicating a reduction in the net effect of total defects, was obtained at the optimized sputtering power with less deviation from stoichiometry in the Cu-Se thin films and the closest stoichiometric ratio at an intermediate depth.https://www.mdpi.com/1996-1944/16/18/6087Cu-Se thin filmsRF magnetron sputteringCuSe<sub>2</sub> multi-component targetoptical and electrical propertiesstoichiometry |
| spellingShingle | Sara Kim Yong-Seok Lee Nam-Hoon Kim Homogeneity- and Stoichiometry-Induced Electrical and Optical Properties of Cu-Se Thin Films by RF Sputtering Power Materials Cu-Se thin films RF magnetron sputtering CuSe<sub>2</sub> multi-component target optical and electrical properties stoichiometry |
| title | Homogeneity- and Stoichiometry-Induced Electrical and Optical Properties of Cu-Se Thin Films by RF Sputtering Power |
| title_full | Homogeneity- and Stoichiometry-Induced Electrical and Optical Properties of Cu-Se Thin Films by RF Sputtering Power |
| title_fullStr | Homogeneity- and Stoichiometry-Induced Electrical and Optical Properties of Cu-Se Thin Films by RF Sputtering Power |
| title_full_unstemmed | Homogeneity- and Stoichiometry-Induced Electrical and Optical Properties of Cu-Se Thin Films by RF Sputtering Power |
| title_short | Homogeneity- and Stoichiometry-Induced Electrical and Optical Properties of Cu-Se Thin Films by RF Sputtering Power |
| title_sort | homogeneity and stoichiometry induced electrical and optical properties of cu se thin films by rf sputtering power |
| topic | Cu-Se thin films RF magnetron sputtering CuSe<sub>2</sub> multi-component target optical and electrical properties stoichiometry |
| url | https://www.mdpi.com/1996-1944/16/18/6087 |
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