Overcoming Size Effects in Ferroelectric Thin Films
Abstract Ferroelectric thin films have recently received unprecedented attention due to the need to miniaturize electronic circuit devices. Synthesis and deposition processes along with theoretical calculations are improved remarkably to realize stable ferroelectric thin films up to nanometer thickn...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2023-06-01
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| Series: | Advanced Physics Research |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/apxr.202200096 |
| _version_ | 1797775057682956288 |
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| author | Sung Hyuk Park Jae Young Kim Jae Yong Song Ho Won Jang |
| author_facet | Sung Hyuk Park Jae Young Kim Jae Yong Song Ho Won Jang |
| author_sort | Sung Hyuk Park |
| collection | DOAJ |
| description | Abstract Ferroelectric thin films have recently received unprecedented attention due to the need to miniaturize electronic circuit devices. Synthesis and deposition processes along with theoretical calculations are improved remarkably to realize stable ferroelectric thin films up to nanometer thickness. However, even with technological advances, it is still difficult to overcome the size effect of ferroelectrics, so research is being conducted to achieve stable ferroelectricity in unit‐cell thicknesses thinner than the typical critical thicknesses. In this review, the size effects in ferroelectric thin films are described, and their importance and fundamental limitations are discussed. First, intrinsic and extrinsic factors affecting ferroelectricity are introduced based on the theoretical background of the size effects in ferroelectricity. Then, on understanding the size effects by considering complex interacting factors, the recent works showing ferroelectricity below the commonly known critical thicknesses in perovskite, fluorite oxides, and two‐dimensional (2D) ferroelectrics are introduced. Finally, the results of research efforts in scaling ferroelectric thin films with a future perspective are summarized. |
| first_indexed | 2024-03-12T22:29:54Z |
| format | Article |
| id | doaj.art-c2f00907075544559177c606fb1337f5 |
| institution | Directory Open Access Journal |
| issn | 2751-1200 |
| language | English |
| last_indexed | 2024-03-12T22:29:54Z |
| publishDate | 2023-06-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Physics Research |
| spelling | doaj.art-c2f00907075544559177c606fb1337f52023-07-21T15:30:36ZengWiley-VCHAdvanced Physics Research2751-12002023-06-0126n/an/a10.1002/apxr.202200096Overcoming Size Effects in Ferroelectric Thin FilmsSung Hyuk Park0Jae Young Kim1Jae Yong Song2Ho Won Jang3Department of Materials Science and Engineering Research Institute of Advanced Materials Seoul National University Seoul 08826 Republic of KoreaDepartment of Materials Science and Engineering Research Institute of Advanced Materials Seoul National University Seoul 08826 Republic of KoreaDepartment of Semiconductor Engineering Pohang University of Science and Technology Pohang Gyeongbuk 37673 Republic of KoreaDepartment of Materials Science and Engineering Research Institute of Advanced Materials Seoul National University Seoul 08826 Republic of KoreaAbstract Ferroelectric thin films have recently received unprecedented attention due to the need to miniaturize electronic circuit devices. Synthesis and deposition processes along with theoretical calculations are improved remarkably to realize stable ferroelectric thin films up to nanometer thickness. However, even with technological advances, it is still difficult to overcome the size effect of ferroelectrics, so research is being conducted to achieve stable ferroelectricity in unit‐cell thicknesses thinner than the typical critical thicknesses. In this review, the size effects in ferroelectric thin films are described, and their importance and fundamental limitations are discussed. First, intrinsic and extrinsic factors affecting ferroelectricity are introduced based on the theoretical background of the size effects in ferroelectricity. Then, on understanding the size effects by considering complex interacting factors, the recent works showing ferroelectricity below the commonly known critical thicknesses in perovskite, fluorite oxides, and two‐dimensional (2D) ferroelectrics are introduced. Finally, the results of research efforts in scaling ferroelectric thin films with a future perspective are summarized.https://doi.org/10.1002/apxr.2022000962D ferroelectricsferroelectricfluoriteperovskite oxidesize effect |
| spellingShingle | Sung Hyuk Park Jae Young Kim Jae Yong Song Ho Won Jang Overcoming Size Effects in Ferroelectric Thin Films Advanced Physics Research 2D ferroelectrics ferroelectric fluorite perovskite oxide size effect |
| title | Overcoming Size Effects in Ferroelectric Thin Films |
| title_full | Overcoming Size Effects in Ferroelectric Thin Films |
| title_fullStr | Overcoming Size Effects in Ferroelectric Thin Films |
| title_full_unstemmed | Overcoming Size Effects in Ferroelectric Thin Films |
| title_short | Overcoming Size Effects in Ferroelectric Thin Films |
| title_sort | overcoming size effects in ferroelectric thin films |
| topic | 2D ferroelectrics ferroelectric fluorite perovskite oxide size effect |
| url | https://doi.org/10.1002/apxr.202200096 |
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