Transverse Scaling of Schottky Barrier Charge-Trapping Cells for Energy-Efficient Applications

Transverse Scaling of Schottky Barrier Charge-Trapping Cells for Energy-Efficient Applications

This work numerically elucidates the effects of transverse scaling on Schottky barrier charge-trapping cells for energy-efficient applications. Together with the scaled gate structures and charge-trapping dielectrics, variations in bias conditions on source-side injection are considered for properly...

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Bibliographic Details
Main Authors: Hung-Jin Teng, Yu-Hsuan Chen, Jr-Jie Tsai, Nguyen Dang Chien, Chenhsin Lien, Chun-Hsing Shih
Format: Article
Language:English
Published: MDPI AG 2020-11-01
Series:Crystals
Subjects:
Schottky barrier
source-side injection
charge-trapping memory
energy-efficient
non-planar double-gate
high-k dielectrics
Online Access:https://www.mdpi.com/2073-4352/10/11/1036

Internet

https://www.mdpi.com/2073-4352/10/11/1036

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