Temperature-Dependent Properties of Graphene on SiC Substrates for Triboelectric Nanogenerators
Graphene has excellent properties such as ultra-high electrical conductivity, high carrier mobility, and thermal conductivity, with a promising application in the field of triboelectric nanogenerators (TENGs). We present a systemic investigation to explore structural, optical, and temperature-depend...
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Frontiers Media S.A.
2022-07-01
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Series: | Frontiers in Materials |
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Online Access: | https://www.frontiersin.org/articles/10.3389/fmats.2022.924143/full |
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author | Sen Wang Sen Wang Lingyu Wan Ding Li Xiufang Chen Xiangang Xu Zhe Chuan Feng Ian T. Ferguson |
author_facet | Sen Wang Sen Wang Lingyu Wan Ding Li Xiufang Chen Xiangang Xu Zhe Chuan Feng Ian T. Ferguson |
author_sort | Sen Wang |
collection | DOAJ |
description | Graphene has excellent properties such as ultra-high electrical conductivity, high carrier mobility, and thermal conductivity, with a promising application in the field of triboelectric nanogenerators (TENGs). We present a systemic investigation to explore structural, optical, and temperature-dependent properties of single- and bi-layer graphene on SiC substrates, prepared by the decomposition of SiC and transferred substrate methods and their applications in TENGs. Compared to the transferred graphene onto a SiC substrate, graphene grown by the decomposition of SiC has a better crystalline quality and surface morphology, fewer impurities, and a more stress effect between graphene and the substrate. It also exhibited a longer correlation length of Raman phonons, implying better crystalline perfection. With the increase in temperature, the phonon correlation length, L, increases synchronously with TENG outputs. Among them, the TENG with a bi-layer graphene grown by the decomposition of SiC showed the best performance, especially at high temperatures. These studies provide an essential reference for further applications of graphene on SiC substrates in TENG-based devices. |
first_indexed | 2024-04-13T03:53:38Z |
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institution | Directory Open Access Journal |
issn | 2296-8016 |
language | English |
last_indexed | 2024-04-13T03:53:38Z |
publishDate | 2022-07-01 |
publisher | Frontiers Media S.A. |
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series | Frontiers in Materials |
spelling | doaj.art-c36f2579de4b4d4bb13e7535b73404dc2022-12-22T03:03:43ZengFrontiers Media S.A.Frontiers in Materials2296-80162022-07-01910.3389/fmats.2022.924143924143Temperature-Dependent Properties of Graphene on SiC Substrates for Triboelectric NanogeneratorsSen Wang0Sen Wang1Lingyu Wan2Ding Li3Xiufang Chen4Xiangang Xu5Zhe Chuan Feng6Ian T. Ferguson7Center on Nanoenergy Research, School of Physical Science and Engineering and Technology, Guangxi University, Nanning, ChinaBeijing Institute of Nanoenergy & Nanosystems, Chinese Academy of Sciences, Beijing, ChinaCenter on Nanoenergy Research, School of Physical Science and Engineering and Technology, Guangxi University, Nanning, ChinaBeijing Institute of Nanoenergy & Nanosystems, Chinese Academy of Sciences, Beijing, ChinaState Key Laboratory of Crystal Materials, Shandong University, Jinan, ChinaState Key Laboratory of Crystal Materials, Shandong University, Jinan, ChinaSouthern Polytechnic College of Engineering and Engineering Technology, Kennesaw State University, Marietta, GA, United StatesSouthern Polytechnic College of Engineering and Engineering Technology, Kennesaw State University, Marietta, GA, United StatesGraphene has excellent properties such as ultra-high electrical conductivity, high carrier mobility, and thermal conductivity, with a promising application in the field of triboelectric nanogenerators (TENGs). We present a systemic investigation to explore structural, optical, and temperature-dependent properties of single- and bi-layer graphene on SiC substrates, prepared by the decomposition of SiC and transferred substrate methods and their applications in TENGs. Compared to the transferred graphene onto a SiC substrate, graphene grown by the decomposition of SiC has a better crystalline quality and surface morphology, fewer impurities, and a more stress effect between graphene and the substrate. It also exhibited a longer correlation length of Raman phonons, implying better crystalline perfection. With the increase in temperature, the phonon correlation length, L, increases synchronously with TENG outputs. Among them, the TENG with a bi-layer graphene grown by the decomposition of SiC showed the best performance, especially at high temperatures. These studies provide an essential reference for further applications of graphene on SiC substrates in TENG-based devices.https://www.frontiersin.org/articles/10.3389/fmats.2022.924143/fulltriboelectric nanogeneratorsSiC-based graphenespatial correlation theorycarrier concentrationtemperature-dependent properties |
spellingShingle | Sen Wang Sen Wang Lingyu Wan Ding Li Xiufang Chen Xiangang Xu Zhe Chuan Feng Ian T. Ferguson Temperature-Dependent Properties of Graphene on SiC Substrates for Triboelectric Nanogenerators Frontiers in Materials triboelectric nanogenerators SiC-based graphene spatial correlation theory carrier concentration temperature-dependent properties |
title | Temperature-Dependent Properties of Graphene on SiC Substrates for Triboelectric Nanogenerators |
title_full | Temperature-Dependent Properties of Graphene on SiC Substrates for Triboelectric Nanogenerators |
title_fullStr | Temperature-Dependent Properties of Graphene on SiC Substrates for Triboelectric Nanogenerators |
title_full_unstemmed | Temperature-Dependent Properties of Graphene on SiC Substrates for Triboelectric Nanogenerators |
title_short | Temperature-Dependent Properties of Graphene on SiC Substrates for Triboelectric Nanogenerators |
title_sort | temperature dependent properties of graphene on sic substrates for triboelectric nanogenerators |
topic | triboelectric nanogenerators SiC-based graphene spatial correlation theory carrier concentration temperature-dependent properties |
url | https://www.frontiersin.org/articles/10.3389/fmats.2022.924143/full |
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