Temperature-Dependent Properties of Graphene on SiC Substrates for Triboelectric Nanogenerators

Graphene has excellent properties such as ultra-high electrical conductivity, high carrier mobility, and thermal conductivity, with a promising application in the field of triboelectric nanogenerators (TENGs). We present a systemic investigation to explore structural, optical, and temperature-depend...

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Main Authors: Sen Wang, Lingyu Wan, Ding Li, Xiufang Chen, Xiangang Xu, Zhe Chuan Feng, Ian T. Ferguson
Format: Article
Language:English
Published: Frontiers Media S.A. 2022-07-01
Series:Frontiers in Materials
Subjects:
Online Access:https://www.frontiersin.org/articles/10.3389/fmats.2022.924143/full
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author Sen Wang
Sen Wang
Lingyu Wan
Ding Li
Xiufang Chen
Xiangang Xu
Zhe Chuan Feng
Ian T. Ferguson
author_facet Sen Wang
Sen Wang
Lingyu Wan
Ding Li
Xiufang Chen
Xiangang Xu
Zhe Chuan Feng
Ian T. Ferguson
author_sort Sen Wang
collection DOAJ
description Graphene has excellent properties such as ultra-high electrical conductivity, high carrier mobility, and thermal conductivity, with a promising application in the field of triboelectric nanogenerators (TENGs). We present a systemic investigation to explore structural, optical, and temperature-dependent properties of single- and bi-layer graphene on SiC substrates, prepared by the decomposition of SiC and transferred substrate methods and their applications in TENGs. Compared to the transferred graphene onto a SiC substrate, graphene grown by the decomposition of SiC has a better crystalline quality and surface morphology, fewer impurities, and a more stress effect between graphene and the substrate. It also exhibited a longer correlation length of Raman phonons, implying better crystalline perfection. With the increase in temperature, the phonon correlation length, L, increases synchronously with TENG outputs. Among them, the TENG with a bi-layer graphene grown by the decomposition of SiC showed the best performance, especially at high temperatures. These studies provide an essential reference for further applications of graphene on SiC substrates in TENG-based devices.
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spelling doaj.art-c36f2579de4b4d4bb13e7535b73404dc2022-12-22T03:03:43ZengFrontiers Media S.A.Frontiers in Materials2296-80162022-07-01910.3389/fmats.2022.924143924143Temperature-Dependent Properties of Graphene on SiC Substrates for Triboelectric NanogeneratorsSen Wang0Sen Wang1Lingyu Wan2Ding Li3Xiufang Chen4Xiangang Xu5Zhe Chuan Feng6Ian T. Ferguson7Center on Nanoenergy Research, School of Physical Science and Engineering and Technology, Guangxi University, Nanning, ChinaBeijing Institute of Nanoenergy & Nanosystems, Chinese Academy of Sciences, Beijing, ChinaCenter on Nanoenergy Research, School of Physical Science and Engineering and Technology, Guangxi University, Nanning, ChinaBeijing Institute of Nanoenergy & Nanosystems, Chinese Academy of Sciences, Beijing, ChinaState Key Laboratory of Crystal Materials, Shandong University, Jinan, ChinaState Key Laboratory of Crystal Materials, Shandong University, Jinan, ChinaSouthern Polytechnic College of Engineering and Engineering Technology, Kennesaw State University, Marietta, GA, United StatesSouthern Polytechnic College of Engineering and Engineering Technology, Kennesaw State University, Marietta, GA, United StatesGraphene has excellent properties such as ultra-high electrical conductivity, high carrier mobility, and thermal conductivity, with a promising application in the field of triboelectric nanogenerators (TENGs). We present a systemic investigation to explore structural, optical, and temperature-dependent properties of single- and bi-layer graphene on SiC substrates, prepared by the decomposition of SiC and transferred substrate methods and their applications in TENGs. Compared to the transferred graphene onto a SiC substrate, graphene grown by the decomposition of SiC has a better crystalline quality and surface morphology, fewer impurities, and a more stress effect between graphene and the substrate. It also exhibited a longer correlation length of Raman phonons, implying better crystalline perfection. With the increase in temperature, the phonon correlation length, L, increases synchronously with TENG outputs. Among them, the TENG with a bi-layer graphene grown by the decomposition of SiC showed the best performance, especially at high temperatures. These studies provide an essential reference for further applications of graphene on SiC substrates in TENG-based devices.https://www.frontiersin.org/articles/10.3389/fmats.2022.924143/fulltriboelectric nanogeneratorsSiC-based graphenespatial correlation theorycarrier concentrationtemperature-dependent properties
spellingShingle Sen Wang
Sen Wang
Lingyu Wan
Ding Li
Xiufang Chen
Xiangang Xu
Zhe Chuan Feng
Ian T. Ferguson
Temperature-Dependent Properties of Graphene on SiC Substrates for Triboelectric Nanogenerators
Frontiers in Materials
triboelectric nanogenerators
SiC-based graphene
spatial correlation theory
carrier concentration
temperature-dependent properties
title Temperature-Dependent Properties of Graphene on SiC Substrates for Triboelectric Nanogenerators
title_full Temperature-Dependent Properties of Graphene on SiC Substrates for Triboelectric Nanogenerators
title_fullStr Temperature-Dependent Properties of Graphene on SiC Substrates for Triboelectric Nanogenerators
title_full_unstemmed Temperature-Dependent Properties of Graphene on SiC Substrates for Triboelectric Nanogenerators
title_short Temperature-Dependent Properties of Graphene on SiC Substrates for Triboelectric Nanogenerators
title_sort temperature dependent properties of graphene on sic substrates for triboelectric nanogenerators
topic triboelectric nanogenerators
SiC-based graphene
spatial correlation theory
carrier concentration
temperature-dependent properties
url https://www.frontiersin.org/articles/10.3389/fmats.2022.924143/full
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