High detectivity and fast response avalanche photodetector based on GaSe/PtSe2 p–n junction
Heterojunction photodetectors based on 2D materials are a promising geometry to acquire broadband photodetection with combination of wide-bandgap and narrow bandgap functional materials. But the interface condition of the heterojunction is difficult to control due to the inevitable introduction of a...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2023-04-01
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| Series: | Materials & Design |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S0264127523002630 |
| _version_ | 1797843941326848000 |
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| author | Kaiwen Gong Lianbi Li Wenzhi Yu Haoran Mu Jian Yuan Ran Hao Baiquan Liu Zengxia Mei Luyao Mei Haozhe Li Shenghuang Lin |
| author_facet | Kaiwen Gong Lianbi Li Wenzhi Yu Haoran Mu Jian Yuan Ran Hao Baiquan Liu Zengxia Mei Luyao Mei Haozhe Li Shenghuang Lin |
| author_sort | Kaiwen Gong |
| collection | DOAJ |
| description | Heterojunction photodetectors based on 2D materials are a promising geometry to acquire broadband photodetection with combination of wide-bandgap and narrow bandgap functional materials. But the interface condition of the heterojunction is difficult to control due to the inevitable introduction of air bubbles and wrinkles. In this paper, a synthesis method merging exfoliation and CVD is reported to fabricate photodetectors of the GaSe/PtSe2 heterojunction. The devices present the highest responsivity and detectivity of about 1.7 A/W and 3.51 × 1012 Jones at a −10 V bias under the avalanche mode, respectively. Also, a fast response time could be obtained around 20 μs. In addition, the photodetector exhibits a clear photovoltaic effect, which can work in a self-powered mode. |
| first_indexed | 2024-04-09T17:14:10Z |
| format | Article |
| id | doaj.art-c38957e435534ccfa393bc1bbbd67c15 |
| institution | Directory Open Access Journal |
| issn | 0264-1275 |
| language | English |
| last_indexed | 2024-04-09T17:14:10Z |
| publishDate | 2023-04-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Materials & Design |
| spelling | doaj.art-c38957e435534ccfa393bc1bbbd67c152023-04-20T04:35:22ZengElsevierMaterials & Design0264-12752023-04-01228111848High detectivity and fast response avalanche photodetector based on GaSe/PtSe2 p–n junctionKaiwen Gong0Lianbi Li1Wenzhi Yu2Haoran Mu3Jian Yuan4Ran Hao5Baiquan Liu6Zengxia Mei7Luyao Mei8Haozhe Li9Shenghuang Lin10School of Science, Xi’an Polytechnic University, Xi’an 710048, PR China; Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, PR ChinaSchool of Science, Xi’an Polytechnic University, Xi’an 710048, PR China; Corresponding authors at: Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, PR China (W. Yu).Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, PR China; Institute of Physics, Chinese Academy of Science, Beijing 100190, PR China; Corresponding authors at: Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, PR China (W. Yu).Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, PR China; Corresponding authors at: Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, PR China (W. Yu).Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, PR China; Corresponding authors at: Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, PR China (W. Yu).China Jiliang University, College of Optical and Electronic Technology, Hangzhou 310018, PR ChinaSchool of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510006, PR ChinaSongshan Lake Materials Laboratory, Dongguan, Guangdong 523808, PR ChinaSongshan Lake Materials Laboratory, Dongguan, Guangdong 523808, PR ChinaSongshan Lake Materials Laboratory, Dongguan, Guangdong 523808, PR ChinaSongshan Lake Materials Laboratory, Dongguan, Guangdong 523808, PR China; Corresponding authors at: Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, PR China (W. Yu).Heterojunction photodetectors based on 2D materials are a promising geometry to acquire broadband photodetection with combination of wide-bandgap and narrow bandgap functional materials. But the interface condition of the heterojunction is difficult to control due to the inevitable introduction of air bubbles and wrinkles. In this paper, a synthesis method merging exfoliation and CVD is reported to fabricate photodetectors of the GaSe/PtSe2 heterojunction. The devices present the highest responsivity and detectivity of about 1.7 A/W and 3.51 × 1012 Jones at a −10 V bias under the avalanche mode, respectively. Also, a fast response time could be obtained around 20 μs. In addition, the photodetector exhibits a clear photovoltaic effect, which can work in a self-powered mode.http://www.sciencedirect.com/science/article/pii/S02641275230026302D heterojunctionAvalanche photodetectorCVDMechanical exfoliation |
| spellingShingle | Kaiwen Gong Lianbi Li Wenzhi Yu Haoran Mu Jian Yuan Ran Hao Baiquan Liu Zengxia Mei Luyao Mei Haozhe Li Shenghuang Lin High detectivity and fast response avalanche photodetector based on GaSe/PtSe2 p–n junction Materials & Design 2D heterojunction Avalanche photodetector CVD Mechanical exfoliation |
| title | High detectivity and fast response avalanche photodetector based on GaSe/PtSe2 p–n junction |
| title_full | High detectivity and fast response avalanche photodetector based on GaSe/PtSe2 p–n junction |
| title_fullStr | High detectivity and fast response avalanche photodetector based on GaSe/PtSe2 p–n junction |
| title_full_unstemmed | High detectivity and fast response avalanche photodetector based on GaSe/PtSe2 p–n junction |
| title_short | High detectivity and fast response avalanche photodetector based on GaSe/PtSe2 p–n junction |
| title_sort | high detectivity and fast response avalanche photodetector based on gase ptse2 p n junction |
| topic | 2D heterojunction Avalanche photodetector CVD Mechanical exfoliation |
| url | http://www.sciencedirect.com/science/article/pii/S0264127523002630 |
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