Epitaxial ferroelectric memristors integrated with silicon
Neuromorphic computing requires the development of solid-state units able to electrically mimic the behavior of biological neurons and synapses. This can be achieved by developing memristive systems based on ferroelectric oxides. In this work we fabricate and characterize high quality epitaxial BaTi...
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| Format: | Article |
| Language: | English |
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Frontiers Media S.A.
2022-12-01
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| Series: | Frontiers in Nanotechnology |
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| Online Access: | https://www.frontiersin.org/articles/10.3389/fnano.2022.1092177/full |
| _version_ | 1797980768990920704 |
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| author | Miguel Rengifo Miguel Rengifo Miguel Rengifo Myriam H. Aguirre Myriam H. Aguirre Myriam H. Aguirre Martín Sirena Martín Sirena Ulrike Lüders Diego Rubi Diego Rubi |
| author_facet | Miguel Rengifo Miguel Rengifo Miguel Rengifo Myriam H. Aguirre Myriam H. Aguirre Myriam H. Aguirre Martín Sirena Martín Sirena Ulrike Lüders Diego Rubi Diego Rubi |
| author_sort | Miguel Rengifo |
| collection | DOAJ |
| description | Neuromorphic computing requires the development of solid-state units able to electrically mimic the behavior of biological neurons and synapses. This can be achieved by developing memristive systems based on ferroelectric oxides. In this work we fabricate and characterize high quality epitaxial BaTiO3-based memristors integrated with silicon. After proving the ferroelectric character of BaTiO3 we tested the memristive response of LaNiO3/BaTiO3/Pt microstructures and found a complex behavior which includes the co-existence of volatile and non-volatile effects, arising from the modulation of the BaTiO3/Pt Schottky interface by the direction of the polarization coupled to oxygen vacancy electromigration to/from the interface. This produces remanent resistance loops with tunable ON/OFF ratio and asymmetric resistance relaxations. These properties might be harnessed for the development of neuromorphic hardware compatible with existing silicon-based technology. |
| first_indexed | 2024-04-11T05:59:01Z |
| format | Article |
| id | doaj.art-c38d09869faa4af395c0bed157bafd67 |
| institution | Directory Open Access Journal |
| issn | 2673-3013 |
| language | English |
| last_indexed | 2024-04-11T05:59:01Z |
| publishDate | 2022-12-01 |
| publisher | Frontiers Media S.A. |
| record_format | Article |
| series | Frontiers in Nanotechnology |
| spelling | doaj.art-c38d09869faa4af395c0bed157bafd672022-12-22T04:41:48ZengFrontiers Media S.A.Frontiers in Nanotechnology2673-30132022-12-01410.3389/fnano.2022.10921771092177Epitaxial ferroelectric memristors integrated with siliconMiguel Rengifo0Miguel Rengifo1Miguel Rengifo2Myriam H. Aguirre3Myriam H. Aguirre4Myriam H. Aguirre5Martín Sirena6Martín Sirena7Ulrike Lüders8Diego Rubi9Diego Rubi10Instituto de Nanociencia y Nanotecnología (INN), Comisión Nacional de Energía Atómica-Consejo Nacional de Investigaciones Científicas y Técnicas (CNEA-CONICET), Buenos Aires, ArgentinaDepartamento de Micro y Nanotecnologías, Comisión Nacional de Energía Atómica (CNEA), San Martín, ArgentinaInstituto de Nanociencia y Materiales de Aragón (INMA), Universidad de Zaragoza, Zaragoza, SpainInstituto de Nanociencia y Materiales de Aragón (INMA), Universidad de Zaragoza, Zaragoza, SpainDepartamento de Física de Materia Condensada, Universidad de Zaragoza, Zaragoza, SpainLaboratorio de Microscopías Avanzada (LMA), Instituto de Nanociencia de Aragón (INA)-Universidad de Zaragoza, Zaragoza, SpainInstituto de Nanociencia y Nanotecnología (INN), Comisión Nacional de Energía Atómica-Consejo Nacional de Investigaciones Científicas y Técnicas (CNEA-CONICET), Buenos Aires, ArgentinaCentro Atómico Bariloche and Instituto Balseiro, San Carlos de Bariloche, Río Negro, ArgentinaCRISMAT, CNRS UMR 6508, ENSICAEN, Caen, FranceInstituto de Nanociencia y Nanotecnología (INN), Comisión Nacional de Energía Atómica-Consejo Nacional de Investigaciones Científicas y Técnicas (CNEA-CONICET), Buenos Aires, ArgentinaDepartamento de Micro y Nanotecnologías, Comisión Nacional de Energía Atómica (CNEA), San Martín, ArgentinaNeuromorphic computing requires the development of solid-state units able to electrically mimic the behavior of biological neurons and synapses. This can be achieved by developing memristive systems based on ferroelectric oxides. In this work we fabricate and characterize high quality epitaxial BaTiO3-based memristors integrated with silicon. After proving the ferroelectric character of BaTiO3 we tested the memristive response of LaNiO3/BaTiO3/Pt microstructures and found a complex behavior which includes the co-existence of volatile and non-volatile effects, arising from the modulation of the BaTiO3/Pt Schottky interface by the direction of the polarization coupled to oxygen vacancy electromigration to/from the interface. This produces remanent resistance loops with tunable ON/OFF ratio and asymmetric resistance relaxations. These properties might be harnessed for the development of neuromorphic hardware compatible with existing silicon-based technology.https://www.frontiersin.org/articles/10.3389/fnano.2022.1092177/fullmemristorsneuromorphic computingferroelectricsperovskitesintegration with silicon |
| spellingShingle | Miguel Rengifo Miguel Rengifo Miguel Rengifo Myriam H. Aguirre Myriam H. Aguirre Myriam H. Aguirre Martín Sirena Martín Sirena Ulrike Lüders Diego Rubi Diego Rubi Epitaxial ferroelectric memristors integrated with silicon Frontiers in Nanotechnology memristors neuromorphic computing ferroelectrics perovskites integration with silicon |
| title | Epitaxial ferroelectric memristors integrated with silicon |
| title_full | Epitaxial ferroelectric memristors integrated with silicon |
| title_fullStr | Epitaxial ferroelectric memristors integrated with silicon |
| title_full_unstemmed | Epitaxial ferroelectric memristors integrated with silicon |
| title_short | Epitaxial ferroelectric memristors integrated with silicon |
| title_sort | epitaxial ferroelectric memristors integrated with silicon |
| topic | memristors neuromorphic computing ferroelectrics perovskites integration with silicon |
| url | https://www.frontiersin.org/articles/10.3389/fnano.2022.1092177/full |
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