Carrier Injection to In<sub>0.4</sub>Ga<sub>0.6</sub>As/GaAs Surface Quantum Dots in Coupled Hybrid Nanostructures
Stacking growth of the InGaAs quantum dots (QDs) on top of a carrier injection layer is a very useful strategy to develop QD devices. This research aims to study the carrier injection effect in hybrid structures with a layer of In<sub>0.4</sub>Ga<sub>0.6</sub>As surface quant...
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| Format: | Article |
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MDPI AG
2022-02-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/12/3/319 |
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| author | Jingtao Liu Shiping Luo Xiaohui Liu Ying Wang Chunsheng Wang Shufang Wang Guangsheng Fu Yuriy I. Mazur Morgan E. Ware Gregory J. Salamo Baolai Liang |
| author_facet | Jingtao Liu Shiping Luo Xiaohui Liu Ying Wang Chunsheng Wang Shufang Wang Guangsheng Fu Yuriy I. Mazur Morgan E. Ware Gregory J. Salamo Baolai Liang |
| author_sort | Jingtao Liu |
| collection | DOAJ |
| description | Stacking growth of the InGaAs quantum dots (QDs) on top of a carrier injection layer is a very useful strategy to develop QD devices. This research aims to study the carrier injection effect in hybrid structures with a layer of In<sub>0.4</sub>Ga<sub>0.6</sub>As surface quantum dots (SQDs), coupled to an injection layer of either one layer of In<sub>0.4</sub>Ga<sub>0.6</sub>As buried QDs (BQDs) or an In<sub>0.15</sub>Ga<sub>0.85</sub>As quantum well (QW), both through a 10 nm GaAs thin spacer. Spectroscopic measurements show that carrier capture and emission efficiency for SQDs in the BQD injection structure is better than that of the QW injection, due to strong physical and electrical coupling between the two QD layers. In the case of QW injection, although most carriers can be collected into the QW, they then tunnel into the wetting layer of the SQDs and are subsequently lost to surface states via non-radiative recombination. Therefore, the QW as an injection source for SQDs may not work as well as the BQDs for stacking coupled SQDs structures. |
| first_indexed | 2024-03-09T13:47:30Z |
| format | Article |
| id | doaj.art-c3a8a6e2d8dd4079b8909ac51e956cc3 |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-09T13:47:30Z |
| publishDate | 2022-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-c3a8a6e2d8dd4079b8909ac51e956cc32023-11-30T20:57:31ZengMDPI AGCrystals2073-43522022-02-0112331910.3390/cryst12030319Carrier Injection to In<sub>0.4</sub>Ga<sub>0.6</sub>As/GaAs Surface Quantum Dots in Coupled Hybrid NanostructuresJingtao Liu0Shiping Luo1Xiaohui Liu2Ying Wang3Chunsheng Wang4Shufang Wang5Guangsheng Fu6Yuriy I. Mazur7Morgan E. Ware8Gregory J. Salamo9Baolai Liang10Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science & Technology, Hebei University, Baoding 071002, ChinaHebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science & Technology, Hebei University, Baoding 071002, ChinaHebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science & Technology, Hebei University, Baoding 071002, ChinaHebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science & Technology, Hebei University, Baoding 071002, ChinaHebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science & Technology, Hebei University, Baoding 071002, ChinaHebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science & Technology, Hebei University, Baoding 071002, ChinaHebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science & Technology, Hebei University, Baoding 071002, ChinaInstitute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, USAInstitute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, USAInstitute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, USAHebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science & Technology, Hebei University, Baoding 071002, ChinaStacking growth of the InGaAs quantum dots (QDs) on top of a carrier injection layer is a very useful strategy to develop QD devices. This research aims to study the carrier injection effect in hybrid structures with a layer of In<sub>0.4</sub>Ga<sub>0.6</sub>As surface quantum dots (SQDs), coupled to an injection layer of either one layer of In<sub>0.4</sub>Ga<sub>0.6</sub>As buried QDs (BQDs) or an In<sub>0.15</sub>Ga<sub>0.85</sub>As quantum well (QW), both through a 10 nm GaAs thin spacer. Spectroscopic measurements show that carrier capture and emission efficiency for SQDs in the BQD injection structure is better than that of the QW injection, due to strong physical and electrical coupling between the two QD layers. In the case of QW injection, although most carriers can be collected into the QW, they then tunnel into the wetting layer of the SQDs and are subsequently lost to surface states via non-radiative recombination. Therefore, the QW as an injection source for SQDs may not work as well as the BQDs for stacking coupled SQDs structures.https://www.mdpi.com/2073-4352/12/3/319surface quantum dotscarrier dynamicsphotoluminescencesemiconductor compoundsnanostructures |
| spellingShingle | Jingtao Liu Shiping Luo Xiaohui Liu Ying Wang Chunsheng Wang Shufang Wang Guangsheng Fu Yuriy I. Mazur Morgan E. Ware Gregory J. Salamo Baolai Liang Carrier Injection to In<sub>0.4</sub>Ga<sub>0.6</sub>As/GaAs Surface Quantum Dots in Coupled Hybrid Nanostructures Crystals surface quantum dots carrier dynamics photoluminescence semiconductor compounds nanostructures |
| title | Carrier Injection to In<sub>0.4</sub>Ga<sub>0.6</sub>As/GaAs Surface Quantum Dots in Coupled Hybrid Nanostructures |
| title_full | Carrier Injection to In<sub>0.4</sub>Ga<sub>0.6</sub>As/GaAs Surface Quantum Dots in Coupled Hybrid Nanostructures |
| title_fullStr | Carrier Injection to In<sub>0.4</sub>Ga<sub>0.6</sub>As/GaAs Surface Quantum Dots in Coupled Hybrid Nanostructures |
| title_full_unstemmed | Carrier Injection to In<sub>0.4</sub>Ga<sub>0.6</sub>As/GaAs Surface Quantum Dots in Coupled Hybrid Nanostructures |
| title_short | Carrier Injection to In<sub>0.4</sub>Ga<sub>0.6</sub>As/GaAs Surface Quantum Dots in Coupled Hybrid Nanostructures |
| title_sort | carrier injection to in sub 0 4 sub ga sub 0 6 sub as gaas surface quantum dots in coupled hybrid nanostructures |
| topic | surface quantum dots carrier dynamics photoluminescence semiconductor compounds nanostructures |
| url | https://www.mdpi.com/2073-4352/12/3/319 |
| work_keys_str_mv | AT jingtaoliu carrierinjectiontoinsub04subgasub06subasgaassurfacequantumdotsincoupledhybridnanostructures AT shipingluo carrierinjectiontoinsub04subgasub06subasgaassurfacequantumdotsincoupledhybridnanostructures AT xiaohuiliu carrierinjectiontoinsub04subgasub06subasgaassurfacequantumdotsincoupledhybridnanostructures AT yingwang carrierinjectiontoinsub04subgasub06subasgaassurfacequantumdotsincoupledhybridnanostructures AT chunshengwang carrierinjectiontoinsub04subgasub06subasgaassurfacequantumdotsincoupledhybridnanostructures AT shufangwang carrierinjectiontoinsub04subgasub06subasgaassurfacequantumdotsincoupledhybridnanostructures AT guangshengfu carrierinjectiontoinsub04subgasub06subasgaassurfacequantumdotsincoupledhybridnanostructures AT yuriyimazur carrierinjectiontoinsub04subgasub06subasgaassurfacequantumdotsincoupledhybridnanostructures AT morganeware carrierinjectiontoinsub04subgasub06subasgaassurfacequantumdotsincoupledhybridnanostructures AT gregoryjsalamo carrierinjectiontoinsub04subgasub06subasgaassurfacequantumdotsincoupledhybridnanostructures AT baolailiang carrierinjectiontoinsub04subgasub06subasgaassurfacequantumdotsincoupledhybridnanostructures |