Carrier Injection to In<sub>0.4</sub>Ga<sub>0.6</sub>As/GaAs Surface Quantum Dots in Coupled Hybrid Nanostructures

Carrier Injection to In<sub>0.4</sub>Ga<sub>0.6</sub>As/GaAs Surface Quantum Dots in Coupled Hybrid Nanostructures

Stacking growth of the InGaAs quantum dots (QDs) on top of a carrier injection layer is a very useful strategy to develop QD devices. This research aims to study the carrier injection effect in hybrid structures with a layer of In<sub>0.4</sub>Ga<sub>0.6</sub>As surface quant...

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Bibliographic Details
Main Authors: Jingtao Liu, Shiping Luo, Xiaohui Liu, Ying Wang, Chunsheng Wang, Shufang Wang, Guangsheng Fu, Yuriy I. Mazur, Morgan E. Ware, Gregory J. Salamo, Baolai Liang
Format: Article
Language:English
Published: MDPI AG 2022-02-01
Series:Crystals
Subjects:
surface quantum dots
carrier dynamics
photoluminescence
semiconductor compounds
nanostructures
Online Access:https://www.mdpi.com/2073-4352/12/3/319

Internet

https://www.mdpi.com/2073-4352/12/3/319

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