Medium Voltage Power Switch in Silicon Carbide—A Comparative Study
This paper discusses various solutions of energy conversion in medium voltage using power switches in Silicon Carbide (SiC) technology. In particular, a comparative study is focused on four different variants of an inverter phase leg operating at 1.5 kV DC, which has not been presented in the litera...
Main Authors: | Przemyslaw Trochimiuk, Rafal Kopacz, Krzysztof Frac, Jacek Rabkowski |
---|---|
Format: | Article |
Language: | English |
Published: |
IEEE
2022-01-01
|
Series: | IEEE Access |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/9726202/ |
Similar Items
-
Active Voltage Balancing of Series-Connected 1.7 kV/325 A SiC MOSFETs Enabling Continuous Operation at Medium Voltage
by: Przemyslaw Trochimiuk, et al.
Published: (2021-01-01) -
Experimental Investigation on SiC MOSFET Turn-Off Power Loss Reduction Using the Current Sink Capacitor Technique
by: Michał Harasimczuk, et al.
Published: (2023-12-01) -
A Simple Method to Validate Power Loss in Medium Voltage SiC MOSFETs and Schottky Diodes Operating in a Three-Phase Inverter
by: Jacek Rąbkowski, et al.
Published: (2020-09-01) -
Parasitic-Based Active Gate Driver Improving the Turn-On Process of 1.7 kV SiC Power MOSFET
by: Bartosz Lasek, et al.
Published: (2021-03-01) -
Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs
by: Nick Baker, et al.
Published: (2017-03-01)