Carrier-dependent quadratic scaling of anomalous Hall conductivity in ferromagnetic semiconductor
We report an unconventional carrier-dependent anomalous Hall effect (AHE) with a quadratic scaling relation in epitaxial films of a ferromagnetic semiconductor (ZnCo)O with a high Co concentration. We show the co-existence of AHE together with the nonlinear ordinary Hall effect (NLHE) and the separa...
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| Format: | Article |
| Language: | English |
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Elsevier
2021-10-01
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| Series: | Results in Physics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379721007671 |
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| author | Maoxiang Fu Qiang Cao Jiahui Liu Kun Zhang Guolei Liu Shishou Kang Yanxue Chen Shishen Yan Lihui Bai Liangmo Mei Zhen-Dong Sun |
| author_facet | Maoxiang Fu Qiang Cao Jiahui Liu Kun Zhang Guolei Liu Shishou Kang Yanxue Chen Shishen Yan Lihui Bai Liangmo Mei Zhen-Dong Sun |
| author_sort | Maoxiang Fu |
| collection | DOAJ |
| description | We report an unconventional carrier-dependent anomalous Hall effect (AHE) with a quadratic scaling relation in epitaxial films of a ferromagnetic semiconductor (ZnCo)O with a high Co concentration. We show the co-existence of AHE together with the nonlinear ordinary Hall effect (NLHE) and the separation of NLHE by using a two-conducting channels model in the expression of Hall resistivity. We found that the NLHE depends strongly on both temperature and carrier density n and dominates at low temperature when n <1.0×1020cm−3, indicating the very necessary of separation them from each other for a proper scaling of the AHE. The anomalous Hall resistivity is nearly independent on carrier density and longitudinal resistivity regardless the underlying transport mechanisms and thermal properties. Very interestingly, a quadratic scaling relation between anomalous Hall conductivity and longitudinal conductivity σxyAHE∝σxx2 is obtained. The further analysis shows that σxyAHE∝n2 with a frozen electron mobility. In addition, sign reversal of the AHE has been observed by reducing magnetization via growth controlling engineering. Our results reveal a carrier-dependent AHE in low conductivity regime and provide an experimental evidence for the itinerant ferromagnetism in ferromagnetic semiconductor (ZnCo)O. |
| first_indexed | 2024-12-22T13:57:04Z |
| format | Article |
| id | doaj.art-c3ba5e0287ca4edc972f6a8064cd98e5 |
| institution | Directory Open Access Journal |
| issn | 2211-3797 |
| language | English |
| last_indexed | 2024-12-22T13:57:04Z |
| publishDate | 2021-10-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Physics |
| spelling | doaj.art-c3ba5e0287ca4edc972f6a8064cd98e52022-12-21T18:23:32ZengElsevierResults in Physics2211-37972021-10-0129104686Carrier-dependent quadratic scaling of anomalous Hall conductivity in ferromagnetic semiconductorMaoxiang Fu0Qiang Cao1Jiahui Liu2Kun Zhang3Guolei Liu4Shishou Kang5Yanxue Chen6Shishen Yan7Lihui Bai8Liangmo Mei9Zhen-Dong Sun10School of Physics, Shandong University, Jinan 250100, ChinaSchool of Physics, Shandong University, Jinan 250100, ChinaSchool of Physics, Shandong University, Jinan 250100, ChinaSchool of Physics, Shandong University, Jinan 250100, ChinaSchool of Physics, Shandong University, Jinan 250100, China; Corresponding authors at: School of Physics, Shandong University, Jinan 250100, China.School of Physics, Shandong University, Jinan 250100, ChinaSchool of Physics, Shandong University, Jinan 250100, ChinaSchool of Physics, Shandong University, Jinan 250100, ChinaSchool of Physics, Shandong University, Jinan 250100, ChinaSchool of Physics, Shandong University, Jinan 250100, ChinaSchool of Physics, Shandong University, Jinan 250100, China; School of Physics and Electrical Engineering, Kashi University, Kashgar 844006, China; Corresponding authors at: School of Physics, Shandong University, Jinan 250100, China.We report an unconventional carrier-dependent anomalous Hall effect (AHE) with a quadratic scaling relation in epitaxial films of a ferromagnetic semiconductor (ZnCo)O with a high Co concentration. We show the co-existence of AHE together with the nonlinear ordinary Hall effect (NLHE) and the separation of NLHE by using a two-conducting channels model in the expression of Hall resistivity. We found that the NLHE depends strongly on both temperature and carrier density n and dominates at low temperature when n <1.0×1020cm−3, indicating the very necessary of separation them from each other for a proper scaling of the AHE. The anomalous Hall resistivity is nearly independent on carrier density and longitudinal resistivity regardless the underlying transport mechanisms and thermal properties. Very interestingly, a quadratic scaling relation between anomalous Hall conductivity and longitudinal conductivity σxyAHE∝σxx2 is obtained. The further analysis shows that σxyAHE∝n2 with a frozen electron mobility. In addition, sign reversal of the AHE has been observed by reducing magnetization via growth controlling engineering. Our results reveal a carrier-dependent AHE in low conductivity regime and provide an experimental evidence for the itinerant ferromagnetism in ferromagnetic semiconductor (ZnCo)O.http://www.sciencedirect.com/science/article/pii/S2211379721007671Anomalous Hall effectScaling relationFerromagnetic semiconductorCarrier dependent |
| spellingShingle | Maoxiang Fu Qiang Cao Jiahui Liu Kun Zhang Guolei Liu Shishou Kang Yanxue Chen Shishen Yan Lihui Bai Liangmo Mei Zhen-Dong Sun Carrier-dependent quadratic scaling of anomalous Hall conductivity in ferromagnetic semiconductor Results in Physics Anomalous Hall effect Scaling relation Ferromagnetic semiconductor Carrier dependent |
| title | Carrier-dependent quadratic scaling of anomalous Hall conductivity in ferromagnetic semiconductor |
| title_full | Carrier-dependent quadratic scaling of anomalous Hall conductivity in ferromagnetic semiconductor |
| title_fullStr | Carrier-dependent quadratic scaling of anomalous Hall conductivity in ferromagnetic semiconductor |
| title_full_unstemmed | Carrier-dependent quadratic scaling of anomalous Hall conductivity in ferromagnetic semiconductor |
| title_short | Carrier-dependent quadratic scaling of anomalous Hall conductivity in ferromagnetic semiconductor |
| title_sort | carrier dependent quadratic scaling of anomalous hall conductivity in ferromagnetic semiconductor |
| topic | Anomalous Hall effect Scaling relation Ferromagnetic semiconductor Carrier dependent |
| url | http://www.sciencedirect.com/science/article/pii/S2211379721007671 |
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