Interface Structures and Electrical Properties of Micro-Fabricated Epitaxial Hf-Digermanide/<italic>n</italic>-Ge(001) Contacts

Interface Structures and Electrical Properties of Micro-Fabricated Epitaxial Hf-Digermanide/<italic>n</italic>-Ge(001) Contacts

We investigated the interface crystalline structures and electrical conduction properties of epitaxial Hf-digermanide(HfGe<sub>2</sub>)/<inline-formula> <tex-math notation="LaTeX">${n}$ </tex-math></inline-formula>-Ge(001) contacts with different electro...

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Bibliographic Details
Main Authors: Kentaro Kasahara, Kazuki Senga, Mitsuo Sakashita, Shigehisa Shibayama, Osamu Nakatsuka
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Germanium
metal/semiconductor contact
epitaxy
Schottky barrier height
Online Access:https://ieeexplore.ieee.org/document/9666932/

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