Bipolar Switching Characteristics of Transparent WO<sub>X</sub>-Based RRAM for Synaptic Application and Neuromorphic Engineering

Bipolar Switching Characteristics of Transparent WO<sub>X</sub>-Based RRAM for Synaptic Application and Neuromorphic Engineering

In this work, we evaluate the resistive switching (RS) and synaptic characteristics of a fully transparent resistive random-access memory (T-RRAM) device based on indium-tin-oxide (ITO) electrodes. Here, we fabricated ITO/WO<sub>X</sub>/ITO capacitor structure and incorporated DC-sputter...

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Bibliographic Details
Main Authors: Jihyung Kim, Jongmin Park, Sungjun Kim
Format: Article
Language:English
Published: MDPI AG 2022-10-01
Series:Materials
Subjects:
transparent resistive random-access memory
synapse device
neuromorphic engineering
tungsten oxide
indium tin oxide
Online Access:https://www.mdpi.com/1996-1944/15/20/7185

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