Dielectric Relaxation Behavior of BTO/LSMO Heterojunction
The BaTiO<sub>3</sub> (BTO)/La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub> (LSMO) magnetoelectric composite films were prepared by sol-gel method on STO (001) substrates. The heterojunction has highly preferred orientation and exhibits well ferroelect...
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-04-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/11/5/1109 |
| _version_ | 1797536406438936576 |
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| author | Guoqiang Song Yuanyuan Zhang Sheng Li Jing Yang Wei Bai Xiaodong Tang |
| author_facet | Guoqiang Song Yuanyuan Zhang Sheng Li Jing Yang Wei Bai Xiaodong Tang |
| author_sort | Guoqiang Song |
| collection | DOAJ |
| description | The BaTiO<sub>3</sub> (BTO)/La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub> (LSMO) magnetoelectric composite films were prepared by sol-gel method on STO (001) substrates. The heterojunction has highly preferred orientation and exhibits well ferroelectric properties with perfect hysteresis loops and microscopic polarization switch behaviors. The most interesting thing is the abnormal dielectric relaxation phenomenon in the dielectric spectra at high frequency range and around the phase transition temperature of LSMO. By analyzing the resistance properties of LSMO films, it is indicated that charge-based interfacial coupling, Maxwell-Wagner effect due to the JT polaron and fast resistivity rise in LSMO layer is the main reason. This work emphasizes the crucial role of resistivity exchanges and of carrier accumulation at interfaces for the application of magnetoelectric heterojunction. |
| first_indexed | 2024-03-10T11:59:16Z |
| format | Article |
| id | doaj.art-c3d6f98b2a0f41c5a0c158914ab652b9 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T11:59:16Z |
| publishDate | 2021-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-c3d6f98b2a0f41c5a0c158914ab652b92023-11-21T17:04:07ZengMDPI AGNanomaterials2079-49912021-04-01115110910.3390/nano11051109Dielectric Relaxation Behavior of BTO/LSMO HeterojunctionGuoqiang Song0Yuanyuan Zhang1Sheng Li2Jing Yang3Wei Bai4Xiaodong Tang5Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, East China Normal University, Shanghai 200241, ChinaKey Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, East China Normal University, Shanghai 200241, ChinaKey Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, East China Normal University, Shanghai 200241, ChinaKey Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, East China Normal University, Shanghai 200241, ChinaKey Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, East China Normal University, Shanghai 200241, ChinaKey Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, East China Normal University, Shanghai 200241, ChinaThe BaTiO<sub>3</sub> (BTO)/La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub> (LSMO) magnetoelectric composite films were prepared by sol-gel method on STO (001) substrates. The heterojunction has highly preferred orientation and exhibits well ferroelectric properties with perfect hysteresis loops and microscopic polarization switch behaviors. The most interesting thing is the abnormal dielectric relaxation phenomenon in the dielectric spectra at high frequency range and around the phase transition temperature of LSMO. By analyzing the resistance properties of LSMO films, it is indicated that charge-based interfacial coupling, Maxwell-Wagner effect due to the JT polaron and fast resistivity rise in LSMO layer is the main reason. This work emphasizes the crucial role of resistivity exchanges and of carrier accumulation at interfaces for the application of magnetoelectric heterojunction.https://www.mdpi.com/2079-4991/11/5/1109BaTiO<sub>3</sub>manganeseMaxwell-Wagner effectmagnetoelectric coupling |
| spellingShingle | Guoqiang Song Yuanyuan Zhang Sheng Li Jing Yang Wei Bai Xiaodong Tang Dielectric Relaxation Behavior of BTO/LSMO Heterojunction Nanomaterials BaTiO<sub>3</sub> manganese Maxwell-Wagner effect magnetoelectric coupling |
| title | Dielectric Relaxation Behavior of BTO/LSMO Heterojunction |
| title_full | Dielectric Relaxation Behavior of BTO/LSMO Heterojunction |
| title_fullStr | Dielectric Relaxation Behavior of BTO/LSMO Heterojunction |
| title_full_unstemmed | Dielectric Relaxation Behavior of BTO/LSMO Heterojunction |
| title_short | Dielectric Relaxation Behavior of BTO/LSMO Heterojunction |
| title_sort | dielectric relaxation behavior of bto lsmo heterojunction |
| topic | BaTiO<sub>3</sub> manganese Maxwell-Wagner effect magnetoelectric coupling |
| url | https://www.mdpi.com/2079-4991/11/5/1109 |
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