Implementation of Flip-Chip Microbump Bonding between InP and SiC Substrates for Millimeter-Wave Applications

Implementation of Flip-Chip Microbump Bonding between InP and SiC Substrates for Millimeter-Wave Applications

Flip-chip microbump (μ-bump) bonding technology between indium phosphide (InP) and silicon carbide (SiC) substrates for a millimeter-wave (mmW) wireless communication application is demonstrated. The proposed process of flip-chip μ-bump bonding to achieve high-yield performance utilizes a SiO<sub...

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Bibliographic Details
Main Authors: Jongwon Lee, Jae Yong Lee, Jonghyun Song, Gapseop Sim, Hyoungho Ko, Seong Ho Kong
Format: Article
Language:English
Published: MDPI AG 2022-07-01
Series:Micromachines
Subjects:
InP
SiC
flip-chip bonding
millimeter wave
heterogeneous integration
Online Access:https://www.mdpi.com/2072-666X/13/7/1072

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