Interface Structure, Dielectric Behavior and Temperature Stability of Ba(Mg<sub>1/3</sub>Ta<sub>2/3</sub>)O<sub>3</sub>/PbZr<sub>0.52</sub>Ti<sub>0.48</sub>O<sub>3</sub> Thin Films
Multilayer films can achieve advanced properties and a wide range of applications. The heterogeneous interface plays an important role in the performances of multilayer films. In this paper, the effects of the interface of Ba(Mg<sub>1/3</sub>Ta<sub>2/3</sub>)O<sub>3<...
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| Online Access: | https://www.mdpi.com/1996-1944/16/19/6358 |
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| author | Zhi Wu Yifei Liu Jing Zhou Hong Zhao Zhihui Qin |
| author_facet | Zhi Wu Yifei Liu Jing Zhou Hong Zhao Zhihui Qin |
| author_sort | Zhi Wu |
| collection | DOAJ |
| description | Multilayer films can achieve advanced properties and a wide range of applications. The heterogeneous interface plays an important role in the performances of multilayer films. In this paper, the effects of the interface of Ba(Mg<sub>1/3</sub>Ta<sub>2/3</sub>)O<sub>3</sub>/PbZr<sub>0.52</sub>Ti<sub>0.48</sub>O<sub>3</sub> (BMT/PZT) thin films on dielectric behavior and temperature stability are investigated. The heterogeneous interface structures are characterized by Auger electron spectroscopy (AES). The PZT-BMT interface is different from the BMT-PZT interface in thickness. For the PZT-BMT interface, the PZT thin films are diffused to the whole BMT layers, and the interface thickness is about 90 nm, while the BMT-PZT interface’s thickness is only about 8.6 nm. The presence of heterogeneous interfaces can improve the performances of BMT/PZT thin films and expand their applications. The dielectric constant of BBPP thin films is significantly lower than BPBP thin films, while the dielectric loss is exactly the opposite. The more interfaces there are, the greater the dielectric constant. The relationship between the electric-field-dependent dielectric constant curve and the P-E curve is established. The equivalent interface barrier of the diode is used to show that the dielectric peaks under the positive and negative voltage are different. Similarly, heterogeneous interfaces show a certain improvement in dielectric tunability and temperature stability. |
| first_indexed | 2024-03-10T21:42:06Z |
| format | Article |
| id | doaj.art-c42f2d8e3ba348398a81d79e75960005 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T21:42:06Z |
| publishDate | 2023-09-01 |
| publisher | MDPI AG |
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| series | Materials |
| spelling | doaj.art-c42f2d8e3ba348398a81d79e759600052023-11-19T14:38:47ZengMDPI AGMaterials1996-19442023-09-011619635810.3390/ma16196358Interface Structure, Dielectric Behavior and Temperature Stability of Ba(Mg<sub>1/3</sub>Ta<sub>2/3</sub>)O<sub>3</sub>/PbZr<sub>0.52</sub>Ti<sub>0.48</sub>O<sub>3</sub> Thin FilmsZhi Wu0Yifei Liu1Jing Zhou2Hong Zhao3Zhihui Qin4School of Materials and Engineering, Hunan Institute of Technology, Hengyang 421002, ChinaSchool of Materials and Engineering, Hunan Institute of Technology, Hengyang 421002, ChinaState Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, ChinaSchool of Materials and Engineering, Hunan Institute of Technology, Hengyang 421002, ChinaSchool of Materials and Engineering, Hunan Institute of Technology, Hengyang 421002, ChinaMultilayer films can achieve advanced properties and a wide range of applications. The heterogeneous interface plays an important role in the performances of multilayer films. In this paper, the effects of the interface of Ba(Mg<sub>1/3</sub>Ta<sub>2/3</sub>)O<sub>3</sub>/PbZr<sub>0.52</sub>Ti<sub>0.48</sub>O<sub>3</sub> (BMT/PZT) thin films on dielectric behavior and temperature stability are investigated. The heterogeneous interface structures are characterized by Auger electron spectroscopy (AES). The PZT-BMT interface is different from the BMT-PZT interface in thickness. For the PZT-BMT interface, the PZT thin films are diffused to the whole BMT layers, and the interface thickness is about 90 nm, while the BMT-PZT interface’s thickness is only about 8.6 nm. The presence of heterogeneous interfaces can improve the performances of BMT/PZT thin films and expand their applications. The dielectric constant of BBPP thin films is significantly lower than BPBP thin films, while the dielectric loss is exactly the opposite. The more interfaces there are, the greater the dielectric constant. The relationship between the electric-field-dependent dielectric constant curve and the P-E curve is established. The equivalent interface barrier of the diode is used to show that the dielectric peaks under the positive and negative voltage are different. Similarly, heterogeneous interfaces show a certain improvement in dielectric tunability and temperature stability.https://www.mdpi.com/1996-1944/16/19/6358BMT/PZT thin filmsinterface numberdielectric behaviortemperature stability |
| spellingShingle | Zhi Wu Yifei Liu Jing Zhou Hong Zhao Zhihui Qin Interface Structure, Dielectric Behavior and Temperature Stability of Ba(Mg<sub>1/3</sub>Ta<sub>2/3</sub>)O<sub>3</sub>/PbZr<sub>0.52</sub>Ti<sub>0.48</sub>O<sub>3</sub> Thin Films Materials BMT/PZT thin films interface number dielectric behavior temperature stability |
| title | Interface Structure, Dielectric Behavior and Temperature Stability of Ba(Mg<sub>1/3</sub>Ta<sub>2/3</sub>)O<sub>3</sub>/PbZr<sub>0.52</sub>Ti<sub>0.48</sub>O<sub>3</sub> Thin Films |
| title_full | Interface Structure, Dielectric Behavior and Temperature Stability of Ba(Mg<sub>1/3</sub>Ta<sub>2/3</sub>)O<sub>3</sub>/PbZr<sub>0.52</sub>Ti<sub>0.48</sub>O<sub>3</sub> Thin Films |
| title_fullStr | Interface Structure, Dielectric Behavior and Temperature Stability of Ba(Mg<sub>1/3</sub>Ta<sub>2/3</sub>)O<sub>3</sub>/PbZr<sub>0.52</sub>Ti<sub>0.48</sub>O<sub>3</sub> Thin Films |
| title_full_unstemmed | Interface Structure, Dielectric Behavior and Temperature Stability of Ba(Mg<sub>1/3</sub>Ta<sub>2/3</sub>)O<sub>3</sub>/PbZr<sub>0.52</sub>Ti<sub>0.48</sub>O<sub>3</sub> Thin Films |
| title_short | Interface Structure, Dielectric Behavior and Temperature Stability of Ba(Mg<sub>1/3</sub>Ta<sub>2/3</sub>)O<sub>3</sub>/PbZr<sub>0.52</sub>Ti<sub>0.48</sub>O<sub>3</sub> Thin Films |
| title_sort | interface structure dielectric behavior and temperature stability of ba mg sub 1 3 sub ta sub 2 3 sub o sub 3 sub pbzr sub 0 52 sub ti sub 0 48 sub o sub 3 sub thin films |
| topic | BMT/PZT thin films interface number dielectric behavior temperature stability |
| url | https://www.mdpi.com/1996-1944/16/19/6358 |
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