Piezocapacitance spectroscopy of a radiation defect in silicon
In this article, using non-stationary capacitive deep-level spectroscopy (DLTS), the dependence of the parameters of the radiation defect with the ionization energy Ei = Ec − (0.33±0.02) eB arising after irradiation with n − Si · λ - quanta of the 60Co isotope and annealing the samples at 250°C on u...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2023-01-01
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| Series: | E3S Web of Conferences |
| Online Access: | https://www.e3s-conferences.org/articles/e3sconf/pdf/2023/68/e3sconf_itse2023_06035.pdf |
| Summary: | In this article, using non-stationary capacitive deep-level spectroscopy (DLTS), the dependence of the parameters of the radiation defect with the ionization energy Ei = Ec − (0.33±0.02) eB arising after irradiation with n − Si · λ - quanta of the 60Co isotope and annealing the samples at 250°C on uniaxial compression was studied. It is shown that, under the action of pressure, Ei ΔEi changes depending on the crystallographic direction and reaches values of 0.06−0.12eB. A comparison is made with a similar effect for the level of the A-centre Ec − 0,17 eB. |
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| ISSN: | 2267-1242 |