Piezocapacitance spectroscopy of a radiation defect in silicon
In this article, using non-stationary capacitive deep-level spectroscopy (DLTS), the dependence of the parameters of the radiation defect with the ionization energy Ei = Ec − (0.33±0.02) eB arising after irradiation with n − Si · λ - quanta of the 60Co isotope and annealing the samples at 250°C on u...
Main Authors: | , , |
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Format: | Article |
Language: | English |
Published: |
EDP Sciences
2023-01-01
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Series: | E3S Web of Conferences |
Online Access: | https://www.e3s-conferences.org/articles/e3sconf/pdf/2023/68/e3sconf_itse2023_06035.pdf |