Growth evolution and phase transition from chalcocite to digenite in nanocrystalline copper sulfide: Morphological, optical and electrical properties
Copper sulfide is a promising p-type inorganic semiconductor for optoelectronic devices such as solar cells, due its small band gap energy and its electrical properties. In this work nanocrystalline copper sulfide (CuxS), with two stoichiometric ratios (x = 2, 1.8) was obtained by one-pot synthesis...
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Beilstein-Institut
2014-09-01
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| Series: | Beilstein Journal of Nanotechnology |
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| Online Access: | https://doi.org/10.3762/bjnano.5.166 |
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| author | Priscilla Vasthi Quintana-Ramirez Ma. Concepción Arenas-Arrocena José Santos-Cruz Marina Vega-González Omar Martínez-Alvarez Víctor Manuel Castaño-Meneses Laura Susana Acosta-Torres Javier de la Fuente-Hernández |
| author_facet | Priscilla Vasthi Quintana-Ramirez Ma. Concepción Arenas-Arrocena José Santos-Cruz Marina Vega-González Omar Martínez-Alvarez Víctor Manuel Castaño-Meneses Laura Susana Acosta-Torres Javier de la Fuente-Hernández |
| author_sort | Priscilla Vasthi Quintana-Ramirez |
| collection | DOAJ |
| description | Copper sulfide is a promising p-type inorganic semiconductor for optoelectronic devices such as solar cells, due its small band gap energy and its electrical properties. In this work nanocrystalline copper sulfide (CuxS), with two stoichiometric ratios (x = 2, 1.8) was obtained by one-pot synthesis at 220, 230, 240 and 260 °C in an organic solvent and amorphous CuxS was obtained in aqueous solution. Nanoparticle-like nucleation centers are formed at lower temperatures (220 °C), mixtures of morphologies (nanorods, nanodisks and nanoprisms) are seen at 230 and 240 °C, in which the nanodisks are predominant, while big hexagonal/prismatic crystals are obtained at 260 °C according to TEM results. A mixture of chalcocite and digenite phases was found at 230 and 240 °C, while a clear transition to a pure digenite phase was seen at 260 °C. The evolution of morphology and transition of phases is consistent to the electrical, optical, and morphological properties of the copper sulfide. In fact, digenite Cu1.8S is less resistive (346 Ω/sq) and has a lower energy band gap (1.6 eV) than chalcocite Cu2S (5.72 × 105 Ω/sq, 1.87 eV). Low resistivity was also obtained in CuxS synthesized in aqueous solution, despite its amorphous structure. All CuxS products could be promising for optoelectronic applications. |
| first_indexed | 2024-12-10T04:40:05Z |
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| issn | 2190-4286 |
| language | English |
| last_indexed | 2024-12-10T04:40:05Z |
| publishDate | 2014-09-01 |
| publisher | Beilstein-Institut |
| record_format | Article |
| series | Beilstein Journal of Nanotechnology |
| spelling | doaj.art-c49a0cfff8f34886909236431b11e1332022-12-22T02:01:54ZengBeilstein-InstitutBeilstein Journal of Nanotechnology2190-42862014-09-01511542155210.3762/bjnano.5.1662190-4286-5-166Growth evolution and phase transition from chalcocite to digenite in nanocrystalline copper sulfide: Morphological, optical and electrical propertiesPriscilla Vasthi Quintana-Ramirez0Ma. Concepción Arenas-Arrocena1José Santos-Cruz2Marina Vega-González3Omar Martínez-Alvarez4Víctor Manuel Castaño-Meneses5Laura Susana Acosta-Torres6Javier de la Fuente-Hernández7Posgrado en Ciencia e Ingeniería de Materiales, Centro de Física Aplicada y Tecnología Avanzada, Universidad Nacional Autónoma de México, 76230, Querétaro, MéxicoEscuela Nacional de Estudios Superiores Unidad León, UNAM, Boulevard UNAM No. 2011 Predio el Saucillo y el Potrero, 36969, León Guanajuato, MéxicoFacultad de Química, Materiales Universidad Autónoma de Querétaro, 76010, Querétaro, MéxicoCentro de Geociencias, UNAM, 76230, Querétaro, MéxicoDepartamento de Ingeniería en Energía, Universidad Politécnica de Guanajuato, 38483, Guanajuato, MéxicoDepartamento de Ingeniería Molecular de Materiales, CFATA, UNAM, 76230, Querétaro, MéxicoEscuela Nacional de Estudios Superiores Unidad León, UNAM, Boulevard UNAM No. 2011 Predio el Saucillo y el Potrero, 36969, León Guanajuato, MéxicoEscuela Nacional de Estudios Superiores Unidad León, UNAM, Boulevard UNAM No. 2011 Predio el Saucillo y el Potrero, 36969, León Guanajuato, MéxicoCopper sulfide is a promising p-type inorganic semiconductor for optoelectronic devices such as solar cells, due its small band gap energy and its electrical properties. In this work nanocrystalline copper sulfide (CuxS), with two stoichiometric ratios (x = 2, 1.8) was obtained by one-pot synthesis at 220, 230, 240 and 260 °C in an organic solvent and amorphous CuxS was obtained in aqueous solution. Nanoparticle-like nucleation centers are formed at lower temperatures (220 °C), mixtures of morphologies (nanorods, nanodisks and nanoprisms) are seen at 230 and 240 °C, in which the nanodisks are predominant, while big hexagonal/prismatic crystals are obtained at 260 °C according to TEM results. A mixture of chalcocite and digenite phases was found at 230 and 240 °C, while a clear transition to a pure digenite phase was seen at 260 °C. The evolution of morphology and transition of phases is consistent to the electrical, optical, and morphological properties of the copper sulfide. In fact, digenite Cu1.8S is less resistive (346 Ω/sq) and has a lower energy band gap (1.6 eV) than chalcocite Cu2S (5.72 × 105 Ω/sq, 1.87 eV). Low resistivity was also obtained in CuxS synthesized in aqueous solution, despite its amorphous structure. All CuxS products could be promising for optoelectronic applications.https://doi.org/10.3762/bjnano.5.166abundant materials in the crust of Earthelectrical resistancenanocrystalsnanodisksnon-toxic semiconductorsoptical band gapphase transitionphotocurrent |
| spellingShingle | Priscilla Vasthi Quintana-Ramirez Ma. Concepción Arenas-Arrocena José Santos-Cruz Marina Vega-González Omar Martínez-Alvarez Víctor Manuel Castaño-Meneses Laura Susana Acosta-Torres Javier de la Fuente-Hernández Growth evolution and phase transition from chalcocite to digenite in nanocrystalline copper sulfide: Morphological, optical and electrical properties Beilstein Journal of Nanotechnology abundant materials in the crust of Earth electrical resistance nanocrystals nanodisks non-toxic semiconductors optical band gap phase transition photocurrent |
| title | Growth evolution and phase transition from chalcocite to digenite in nanocrystalline copper sulfide: Morphological, optical and electrical properties |
| title_full | Growth evolution and phase transition from chalcocite to digenite in nanocrystalline copper sulfide: Morphological, optical and electrical properties |
| title_fullStr | Growth evolution and phase transition from chalcocite to digenite in nanocrystalline copper sulfide: Morphological, optical and electrical properties |
| title_full_unstemmed | Growth evolution and phase transition from chalcocite to digenite in nanocrystalline copper sulfide: Morphological, optical and electrical properties |
| title_short | Growth evolution and phase transition from chalcocite to digenite in nanocrystalline copper sulfide: Morphological, optical and electrical properties |
| title_sort | growth evolution and phase transition from chalcocite to digenite in nanocrystalline copper sulfide morphological optical and electrical properties |
| topic | abundant materials in the crust of Earth electrical resistance nanocrystals nanodisks non-toxic semiconductors optical band gap phase transition photocurrent |
| url | https://doi.org/10.3762/bjnano.5.166 |
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