Crystallographic plane-orientation dependent atomic force microscopy-based local oxidation of silicon carbide

Crystallographic plane-orientation dependent atomic force microscopy-based local oxidation of silicon carbide

<p>Abstract</p> <p>The effect of crystalline plane orientations of Silicon carbide (SiC) (a-, m-, and c-planes) on the local oxidation on 4H-SiC using atomic force microscopy (AFM) was investigated. It has been found that the AFM-based local oxidation (AFM-LO) rate on SiC is closel...

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Bibliographic Details
Main Authors: Kim Sang-Cheol, Lee Ji-Hoon, Ahn Jung-Joon, Jo Yeong-Deuk, Koo Sang-Mo
Format: Article
Language:English
Published: SpringerOpen 2011-01-01
Series:Nanoscale Research Letters
Online Access:http://www.nanoscalereslett.com/content/6/1/235

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