Experimental investigation of the stimulated Raman scattering effect in high-power nanosecond superfluorescent fiber source
In this work, we experimentally investigate the dependence of the stimulated Raman scattering (SRS) effect on the seed linewidth of a high-power nanosecond superfluorescent fiber source (ns-SFS). The results reveal that the SRS in the ns-SFS amplifier is significantly influenced by the full width at...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Cambridge University Press
2023-01-01
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| Series: | High Power Laser Science and Engineering |
| Subjects: | |
| Online Access: | https://www.cambridge.org/core/product/identifier/S2095471923000725/type/journal_article |
| _version_ | 1797403390859280384 |
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| author | Chaoyu Ning Shuzhen Zou Haijuan Yu Jiexi Zuo Xuechun Chen Shuang Xu Shifei Han Xinyao Li Wenjuan Wu Chaojian He Xuechun Lin |
| author_facet | Chaoyu Ning Shuzhen Zou Haijuan Yu Jiexi Zuo Xuechun Chen Shuang Xu Shifei Han Xinyao Li Wenjuan Wu Chaojian He Xuechun Lin |
| author_sort | Chaoyu Ning |
| collection | DOAJ |
| description | In this work, we experimentally investigate the dependence of the stimulated Raman scattering (SRS) effect on the seed linewidth of a high-power nanosecond superfluorescent fiber source (ns-SFS). The results reveal that the SRS in the ns-SFS amplifier is significantly influenced by the full width at half maximum (FWHM) of the ns-SFS seed, and there is an optimal FWHM linewidth of 2 nm to achieve the lowest SRS in our case. The first-order SRS power ratio increases rapidly when the seed’s linewidth deviates from the optimal FWHM linewidth. By power scaling the ns-SFS seed with the optimal FWHM linewidth, a narrowband all-fiberized ns-SFS amplifier is achieved with a maximum average power of 602 W, pulse energy of 24.1 mJ and corresponding peak power of 422.5 kW. This is the highest average power and pulse energy achieved for all-fiberized ns-SFS amplifiers to the best of our knowledge. |
| first_indexed | 2024-03-09T02:38:44Z |
| format | Article |
| id | doaj.art-c4b115ad8f0b42ee91f555e52d95017a |
| institution | Directory Open Access Journal |
| issn | 2095-4719 2052-3289 |
| language | English |
| last_indexed | 2024-03-09T02:38:44Z |
| publishDate | 2023-01-01 |
| publisher | Cambridge University Press |
| record_format | Article |
| series | High Power Laser Science and Engineering |
| spelling | doaj.art-c4b115ad8f0b42ee91f555e52d95017a2023-12-06T07:32:04ZengCambridge University PressHigh Power Laser Science and Engineering2095-47192052-32892023-01-011110.1017/hpl.2023.72Experimental investigation of the stimulated Raman scattering effect in high-power nanosecond superfluorescent fiber sourceChaoyu Ning0https://orcid.org/0000-0003-2642-4701Shuzhen Zou1Haijuan Yu2Jiexi Zuo3https://orcid.org/0000-0001-7449-9885Xuechun Chen4https://orcid.org/0000-0002-2222-2048Shuang Xu5https://orcid.org/0000-0003-2369-1767Shifei Han6Xinyao Li7https://orcid.org/0000-0003-4618-6755Wenjuan Wu8Chaojian He9Xuechun Lin10Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, ChinaLaboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, ChinaLaboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, ChinaLaboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, ChinaLaboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, ChinaLaboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, ChinaLaboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, ChinaLaboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, ChinaLaboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, ChinaLaboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, ChinaLaboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, ChinaIn this work, we experimentally investigate the dependence of the stimulated Raman scattering (SRS) effect on the seed linewidth of a high-power nanosecond superfluorescent fiber source (ns-SFS). The results reveal that the SRS in the ns-SFS amplifier is significantly influenced by the full width at half maximum (FWHM) of the ns-SFS seed, and there is an optimal FWHM linewidth of 2 nm to achieve the lowest SRS in our case. The first-order SRS power ratio increases rapidly when the seed’s linewidth deviates from the optimal FWHM linewidth. By power scaling the ns-SFS seed with the optimal FWHM linewidth, a narrowband all-fiberized ns-SFS amplifier is achieved with a maximum average power of 602 W, pulse energy of 24.1 mJ and corresponding peak power of 422.5 kW. This is the highest average power and pulse energy achieved for all-fiberized ns-SFS amplifiers to the best of our knowledge.https://www.cambridge.org/core/product/identifier/S2095471923000725/type/journal_articlefiber amplifierhigh powernanosecond superfluorescent fiber sourcestimulated Raman scattering effect |
| spellingShingle | Chaoyu Ning Shuzhen Zou Haijuan Yu Jiexi Zuo Xuechun Chen Shuang Xu Shifei Han Xinyao Li Wenjuan Wu Chaojian He Xuechun Lin Experimental investigation of the stimulated Raman scattering effect in high-power nanosecond superfluorescent fiber source High Power Laser Science and Engineering fiber amplifier high power nanosecond superfluorescent fiber source stimulated Raman scattering effect |
| title | Experimental investigation of the stimulated Raman scattering effect in high-power nanosecond superfluorescent fiber source |
| title_full | Experimental investigation of the stimulated Raman scattering effect in high-power nanosecond superfluorescent fiber source |
| title_fullStr | Experimental investigation of the stimulated Raman scattering effect in high-power nanosecond superfluorescent fiber source |
| title_full_unstemmed | Experimental investigation of the stimulated Raman scattering effect in high-power nanosecond superfluorescent fiber source |
| title_short | Experimental investigation of the stimulated Raman scattering effect in high-power nanosecond superfluorescent fiber source |
| title_sort | experimental investigation of the stimulated raman scattering effect in high power nanosecond superfluorescent fiber source |
| topic | fiber amplifier high power nanosecond superfluorescent fiber source stimulated Raman scattering effect |
| url | https://www.cambridge.org/core/product/identifier/S2095471923000725/type/journal_article |
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