Origin of metallicity in atomic Ag wires on Si(557)

We investigated the metallicity of Ag- $\sqrt{3}$ ordered atomic wires close to one monolayer (ML) coverage, which are formed on Si(557) via self assembly. For this purpose we combined high resolution electron energy loss spectroscopy with tunneling microscopy. By extending the excess Ag coverage up...

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Main Authors: U Krieg, T Lichtenstein, C Brand, C Tegenkamp, H Pfnür
Format: Article
Language:English
Published: IOP Publishing 2015-01-01
Series:New Journal of Physics
Subjects:
Online Access:https://doi.org/10.1088/1367-2630/17/4/043062
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author U Krieg
T Lichtenstein
C Brand
C Tegenkamp
H Pfnür
author_facet U Krieg
T Lichtenstein
C Brand
C Tegenkamp
H Pfnür
author_sort U Krieg
collection DOAJ
description We investigated the metallicity of Ag- $\sqrt{3}$ ordered atomic wires close to one monolayer (ML) coverage, which are formed on Si(557) via self assembly. For this purpose we combined high resolution electron energy loss spectroscopy with tunneling microscopy. By extending the excess Ag coverage up to 0.6 ML on samples annealed at high temperatures where partial desorption occurs, we demonstrate that one-dimensional metallicity in the Ag- $\sqrt{3}\times \sqrt{3}$ R30° ordered atomic wires on the (111) mini-terraces originates only from Ag atoms in excess of (local) monolayer coverage, which are adsorbed and localized at the highly stepped parts of the Si(557) surface. Thus these Ag atoms act as extrinsic dopants on the atomic scale, causing coverage dependent subband filling and increasing localization as a function of doping concentration. The second layer lattice gas as well as Ag islands on the (111) terraces turn out not to be relevant as dopants. We simulated the peculiar saturation behavior within a modified lattice gas model and give evidence that the preparation dependent saturation of doping is due to changes of average terrace size and step morphology induced by high temperature treatment.
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spelling doaj.art-c4b1efb96510435da16a247be5b7d1f52023-08-08T14:16:23ZengIOP PublishingNew Journal of Physics1367-26302015-01-0117404306210.1088/1367-2630/17/4/043062Origin of metallicity in atomic Ag wires on Si(557)U Krieg0T Lichtenstein1C Brand2C Tegenkamp3H Pfnür4Institut für Festkörperphysik, Leibniz–Universität Hannover , Appelstrasse 2, D-30167 Hannover, GermanyInstitut für Festkörperphysik, Leibniz–Universität Hannover , Appelstrasse 2, D-30167 Hannover, GermanyInstitut für Festkörperphysik, Leibniz–Universität Hannover , Appelstrasse 2, D-30167 Hannover, GermanyInstitut für Festkörperphysik, Leibniz–Universität Hannover , Appelstrasse 2, D-30167 Hannover, GermanyInstitut für Festkörperphysik, Leibniz–Universität Hannover , Appelstrasse 2, D-30167 Hannover, GermanyWe investigated the metallicity of Ag- $\sqrt{3}$ ordered atomic wires close to one monolayer (ML) coverage, which are formed on Si(557) via self assembly. For this purpose we combined high resolution electron energy loss spectroscopy with tunneling microscopy. By extending the excess Ag coverage up to 0.6 ML on samples annealed at high temperatures where partial desorption occurs, we demonstrate that one-dimensional metallicity in the Ag- $\sqrt{3}\times \sqrt{3}$ R30° ordered atomic wires on the (111) mini-terraces originates only from Ag atoms in excess of (local) monolayer coverage, which are adsorbed and localized at the highly stepped parts of the Si(557) surface. Thus these Ag atoms act as extrinsic dopants on the atomic scale, causing coverage dependent subband filling and increasing localization as a function of doping concentration. The second layer lattice gas as well as Ag islands on the (111) terraces turn out not to be relevant as dopants. We simulated the peculiar saturation behavior within a modified lattice gas model and give evidence that the preparation dependent saturation of doping is due to changes of average terrace size and step morphology induced by high temperature treatment.https://doi.org/10.1088/1367-2630/17/4/043062plasmons in one dimensionwire dopinghigh resolution electron loss spectroscopytunelling microscopy
spellingShingle U Krieg
T Lichtenstein
C Brand
C Tegenkamp
H Pfnür
Origin of metallicity in atomic Ag wires on Si(557)
New Journal of Physics
plasmons in one dimension
wire doping
high resolution electron loss spectroscopy
tunelling microscopy
title Origin of metallicity in atomic Ag wires on Si(557)
title_full Origin of metallicity in atomic Ag wires on Si(557)
title_fullStr Origin of metallicity in atomic Ag wires on Si(557)
title_full_unstemmed Origin of metallicity in atomic Ag wires on Si(557)
title_short Origin of metallicity in atomic Ag wires on Si(557)
title_sort origin of metallicity in atomic ag wires on si 557
topic plasmons in one dimension
wire doping
high resolution electron loss spectroscopy
tunelling microscopy
url https://doi.org/10.1088/1367-2630/17/4/043062
work_keys_str_mv AT ukrieg originofmetallicityinatomicagwiresonsi557
AT tlichtenstein originofmetallicityinatomicagwiresonsi557
AT cbrand originofmetallicityinatomicagwiresonsi557
AT ctegenkamp originofmetallicityinatomicagwiresonsi557
AT hpfnur originofmetallicityinatomicagwiresonsi557