Origin of metallicity in atomic Ag wires on Si(557)
We investigated the metallicity of Ag- $\sqrt{3}$ ordered atomic wires close to one monolayer (ML) coverage, which are formed on Si(557) via self assembly. For this purpose we combined high resolution electron energy loss spectroscopy with tunneling microscopy. By extending the excess Ag coverage up...
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Format: | Article |
Language: | English |
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IOP Publishing
2015-01-01
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Series: | New Journal of Physics |
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Online Access: | https://doi.org/10.1088/1367-2630/17/4/043062 |
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author | U Krieg T Lichtenstein C Brand C Tegenkamp H Pfnür |
author_facet | U Krieg T Lichtenstein C Brand C Tegenkamp H Pfnür |
author_sort | U Krieg |
collection | DOAJ |
description | We investigated the metallicity of Ag- $\sqrt{3}$ ordered atomic wires close to one monolayer (ML) coverage, which are formed on Si(557) via self assembly. For this purpose we combined high resolution electron energy loss spectroscopy with tunneling microscopy. By extending the excess Ag coverage up to 0.6 ML on samples annealed at high temperatures where partial desorption occurs, we demonstrate that one-dimensional metallicity in the Ag- $\sqrt{3}\times \sqrt{3}$ R30° ordered atomic wires on the (111) mini-terraces originates only from Ag atoms in excess of (local) monolayer coverage, which are adsorbed and localized at the highly stepped parts of the Si(557) surface. Thus these Ag atoms act as extrinsic dopants on the atomic scale, causing coverage dependent subband filling and increasing localization as a function of doping concentration. The second layer lattice gas as well as Ag islands on the (111) terraces turn out not to be relevant as dopants. We simulated the peculiar saturation behavior within a modified lattice gas model and give evidence that the preparation dependent saturation of doping is due to changes of average terrace size and step morphology induced by high temperature treatment. |
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id | doaj.art-c4b1efb96510435da16a247be5b7d1f5 |
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issn | 1367-2630 |
language | English |
last_indexed | 2024-03-12T16:45:53Z |
publishDate | 2015-01-01 |
publisher | IOP Publishing |
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spelling | doaj.art-c4b1efb96510435da16a247be5b7d1f52023-08-08T14:16:23ZengIOP PublishingNew Journal of Physics1367-26302015-01-0117404306210.1088/1367-2630/17/4/043062Origin of metallicity in atomic Ag wires on Si(557)U Krieg0T Lichtenstein1C Brand2C Tegenkamp3H Pfnür4Institut für Festkörperphysik, Leibniz–Universität Hannover , Appelstrasse 2, D-30167 Hannover, GermanyInstitut für Festkörperphysik, Leibniz–Universität Hannover , Appelstrasse 2, D-30167 Hannover, GermanyInstitut für Festkörperphysik, Leibniz–Universität Hannover , Appelstrasse 2, D-30167 Hannover, GermanyInstitut für Festkörperphysik, Leibniz–Universität Hannover , Appelstrasse 2, D-30167 Hannover, GermanyInstitut für Festkörperphysik, Leibniz–Universität Hannover , Appelstrasse 2, D-30167 Hannover, GermanyWe investigated the metallicity of Ag- $\sqrt{3}$ ordered atomic wires close to one monolayer (ML) coverage, which are formed on Si(557) via self assembly. For this purpose we combined high resolution electron energy loss spectroscopy with tunneling microscopy. By extending the excess Ag coverage up to 0.6 ML on samples annealed at high temperatures where partial desorption occurs, we demonstrate that one-dimensional metallicity in the Ag- $\sqrt{3}\times \sqrt{3}$ R30° ordered atomic wires on the (111) mini-terraces originates only from Ag atoms in excess of (local) monolayer coverage, which are adsorbed and localized at the highly stepped parts of the Si(557) surface. Thus these Ag atoms act as extrinsic dopants on the atomic scale, causing coverage dependent subband filling and increasing localization as a function of doping concentration. The second layer lattice gas as well as Ag islands on the (111) terraces turn out not to be relevant as dopants. We simulated the peculiar saturation behavior within a modified lattice gas model and give evidence that the preparation dependent saturation of doping is due to changes of average terrace size and step morphology induced by high temperature treatment.https://doi.org/10.1088/1367-2630/17/4/043062plasmons in one dimensionwire dopinghigh resolution electron loss spectroscopytunelling microscopy |
spellingShingle | U Krieg T Lichtenstein C Brand C Tegenkamp H Pfnür Origin of metallicity in atomic Ag wires on Si(557) New Journal of Physics plasmons in one dimension wire doping high resolution electron loss spectroscopy tunelling microscopy |
title | Origin of metallicity in atomic Ag wires on Si(557) |
title_full | Origin of metallicity in atomic Ag wires on Si(557) |
title_fullStr | Origin of metallicity in atomic Ag wires on Si(557) |
title_full_unstemmed | Origin of metallicity in atomic Ag wires on Si(557) |
title_short | Origin of metallicity in atomic Ag wires on Si(557) |
title_sort | origin of metallicity in atomic ag wires on si 557 |
topic | plasmons in one dimension wire doping high resolution electron loss spectroscopy tunelling microscopy |
url | https://doi.org/10.1088/1367-2630/17/4/043062 |
work_keys_str_mv | AT ukrieg originofmetallicityinatomicagwiresonsi557 AT tlichtenstein originofmetallicityinatomicagwiresonsi557 AT cbrand originofmetallicityinatomicagwiresonsi557 AT ctegenkamp originofmetallicityinatomicagwiresonsi557 AT hpfnur originofmetallicityinatomicagwiresonsi557 |