Full-Custom 90 nm CNTFET Process Design Kit: Characterization, Modeling, and Implementation
As the semiconductor industry enters the post-Moore era, the carbon nanotube field-effect transistor (CNTFET) has become a powerful substitute for silicon-based transistors beyond 5 nm process nodes due to its high mobility, low power consumption, and ultra-thin-body electrical advantages. Carbon-ba...
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| Format: | Article |
| Language: | English |
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MDPI AG
2024-02-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/13/3/605 |
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| author | Liming Chen Yuyan Zhang Zhifeng Chen Jiming Chen Huangwei Chen Jianhua Jiang Chengying Chen |
| author_facet | Liming Chen Yuyan Zhang Zhifeng Chen Jiming Chen Huangwei Chen Jianhua Jiang Chengying Chen |
| author_sort | Liming Chen |
| collection | DOAJ |
| description | As the semiconductor industry enters the post-Moore era, the carbon nanotube field-effect transistor (CNTFET) has become a powerful substitute for silicon-based transistors beyond 5 nm process nodes due to its high mobility, low power consumption, and ultra-thin-body electrical advantages. Carbon-based transistor technology has made significant progress in device manufacture and preparation, but carbon-based process design kits (PDKs) that meet the standards of commercial design tools are still an important bottleneck hindering the development of carbon-based integrated circuits. For the first time, a complete full-custom 90 nm CNTFET PDK is proposed in this paper, which includes Pcells for transistors, resistors, and capacitors; a compact model; DRC/LVS/PEX rules; and a standard cell and timing library. It can support the entire design flow of analog, digital, and mixed-signal carbon-based integrated circuits. To achieve an accurate compact model, the back-gate effect of CNTFETs and the influence of gate/drain voltage on transport probability are analyzed. Then the theoretical formulas for mobility and channel current are established. The comparison of the simulation and test results of CNTFET characteristics proves the accuracy of the compact model. Using this PDK, combined with standard IC design tools and design flow, the circuit and layout of an operational amplifier, SRAM, and 8-bit counter are completed. The simulation results verify the correctness and effectiveness of the PDK, laying a solid foundation for the large-scale industrialization of carbon-based integrated circuits. |
| first_indexed | 2024-03-08T03:58:58Z |
| format | Article |
| id | doaj.art-c4c4c4d4c4d240b19e861ad6b0744642 |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-08T03:58:58Z |
| publishDate | 2024-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-c4c4c4d4c4d240b19e861ad6b07446422024-02-09T15:10:47ZengMDPI AGElectronics2079-92922024-02-0113360510.3390/electronics13030605Full-Custom 90 nm CNTFET Process Design Kit: Characterization, Modeling, and ImplementationLiming Chen0Yuyan Zhang1Zhifeng Chen2Jiming Chen3Huangwei Chen4Jianhua Jiang5Chengying Chen6School of Integrated Circuits, Beijing University of Posts and Telecommunications, Beijing 100876, ChinaSchool of Electronics, Peking University, Beijing 100871, ChinaSchool of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, ChinaSchool of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, ChinaSchool of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, ChinaSchool of Electronics, Peking University, Beijing 100871, ChinaSchool of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, ChinaAs the semiconductor industry enters the post-Moore era, the carbon nanotube field-effect transistor (CNTFET) has become a powerful substitute for silicon-based transistors beyond 5 nm process nodes due to its high mobility, low power consumption, and ultra-thin-body electrical advantages. Carbon-based transistor technology has made significant progress in device manufacture and preparation, but carbon-based process design kits (PDKs) that meet the standards of commercial design tools are still an important bottleneck hindering the development of carbon-based integrated circuits. For the first time, a complete full-custom 90 nm CNTFET PDK is proposed in this paper, which includes Pcells for transistors, resistors, and capacitors; a compact model; DRC/LVS/PEX rules; and a standard cell and timing library. It can support the entire design flow of analog, digital, and mixed-signal carbon-based integrated circuits. To achieve an accurate compact model, the back-gate effect of CNTFETs and the influence of gate/drain voltage on transport probability are analyzed. Then the theoretical formulas for mobility and channel current are established. The comparison of the simulation and test results of CNTFET characteristics proves the accuracy of the compact model. Using this PDK, combined with standard IC design tools and design flow, the circuit and layout of an operational amplifier, SRAM, and 8-bit counter are completed. The simulation results verify the correctness and effectiveness of the PDK, laying a solid foundation for the large-scale industrialization of carbon-based integrated circuits.https://www.mdpi.com/2079-9292/13/3/605carbon nanotube field-effect transistor (CNTFET)compact modelpost-Mooreprocess design kit (PDK)standard cell |
| spellingShingle | Liming Chen Yuyan Zhang Zhifeng Chen Jiming Chen Huangwei Chen Jianhua Jiang Chengying Chen Full-Custom 90 nm CNTFET Process Design Kit: Characterization, Modeling, and Implementation Electronics carbon nanotube field-effect transistor (CNTFET) compact model post-Moore process design kit (PDK) standard cell |
| title | Full-Custom 90 nm CNTFET Process Design Kit: Characterization, Modeling, and Implementation |
| title_full | Full-Custom 90 nm CNTFET Process Design Kit: Characterization, Modeling, and Implementation |
| title_fullStr | Full-Custom 90 nm CNTFET Process Design Kit: Characterization, Modeling, and Implementation |
| title_full_unstemmed | Full-Custom 90 nm CNTFET Process Design Kit: Characterization, Modeling, and Implementation |
| title_short | Full-Custom 90 nm CNTFET Process Design Kit: Characterization, Modeling, and Implementation |
| title_sort | full custom 90 nm cntfet process design kit characterization modeling and implementation |
| topic | carbon nanotube field-effect transistor (CNTFET) compact model post-Moore process design kit (PDK) standard cell |
| url | https://www.mdpi.com/2079-9292/13/3/605 |
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