Full-Custom 90 nm CNTFET Process Design Kit: Characterization, Modeling, and Implementation

Full-Custom 90 nm CNTFET Process Design Kit: Characterization, Modeling, and Implementation

As the semiconductor industry enters the post-Moore era, the carbon nanotube field-effect transistor (CNTFET) has become a powerful substitute for silicon-based transistors beyond 5 nm process nodes due to its high mobility, low power consumption, and ultra-thin-body electrical advantages. Carbon-ba...

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Bibliographic Details
Main Authors: Liming Chen, Yuyan Zhang, Zhifeng Chen, Jiming Chen, Huangwei Chen, Jianhua Jiang, Chengying Chen
Format: Article
Language:English
Published: MDPI AG 2024-02-01
Series:Electronics
Subjects:
carbon nanotube field-effect transistor (CNTFET)
compact model
post-Moore
process design kit (PDK)
standard cell
Online Access:https://www.mdpi.com/2079-9292/13/3/605

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