A New Dual-Direction SCR With High Holding Voltage and Low Dynamic Resistance for 5 V Application
Dual-directional silicon-controlled rectifiers (DDSCRs), which provide both positive and negative electrostatic discharge (ESD) surge paths, are ESD protection devices with an excellent area efficiency. However, DDSCRs have a low holding voltage for use in 5 V-class applications, with a relatively h...
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| Format: | Article |
| Language: | English |
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IEEE
2019-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8713486/ |
| _version_ | 1818417166983102464 |
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| author | Kyoung-Il Do Byung-Seok Lee Yong-Seo Koo |
| author_facet | Kyoung-Il Do Byung-Seok Lee Yong-Seo Koo |
| author_sort | Kyoung-Il Do |
| collection | DOAJ |
| description | Dual-directional silicon-controlled rectifiers (DDSCRs), which provide both positive and negative electrostatic discharge (ESD) surge paths, are ESD protection devices with an excellent area efficiency. However, DDSCRs have a low holding voltage for use in 5 V-class applications, with a relatively high on-state resistance because of the elongated ESD surge path compared to unidirectional SCRs. In this paper, we propose a novel DDSCR with a higher holding voltage and a better ESD tolerance than conventional low-triggering DDSCRs (LTDDSCRs), realized by operating two additional parasitic bipolar transistors. The proposed ESD protection device was developed through a 0.18-μm CMOS process, and a timeline pulse system was used to verify its properties. The measurement results show that the proposed ESD protection device exhibits an improved tolerance and a high holding voltage and is expected to be reliable in 5 V-class applications. |
| first_indexed | 2024-12-14T12:02:28Z |
| format | Article |
| id | doaj.art-c4cc12ecb12f45a4a06d87d447d6b7c7 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-14T12:02:28Z |
| publishDate | 2019-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-c4cc12ecb12f45a4a06d87d447d6b7c72022-12-21T23:01:58ZengIEEEIEEE Journal of the Electron Devices Society2168-67342019-01-01760160510.1109/JEDS.2019.29163998713486A New Dual-Direction SCR With High Holding Voltage and Low Dynamic Resistance for 5 V ApplicationKyoung-Il Do0https://orcid.org/0000-0001-8440-9767Byung-Seok Lee1Yong-Seo Koo2Department of Electronics and Electrical Engineering, Dankook University, Yongin-si, South KoreaDepartment of Electronics and Electrical Engineering, Dankook University, Yongin-si, South KoreaDepartment of Electronics and Electrical Engineering, Dankook University, Yongin-si, South KoreaDual-directional silicon-controlled rectifiers (DDSCRs), which provide both positive and negative electrostatic discharge (ESD) surge paths, are ESD protection devices with an excellent area efficiency. However, DDSCRs have a low holding voltage for use in 5 V-class applications, with a relatively high on-state resistance because of the elongated ESD surge path compared to unidirectional SCRs. In this paper, we propose a novel DDSCR with a higher holding voltage and a better ESD tolerance than conventional low-triggering DDSCRs (LTDDSCRs), realized by operating two additional parasitic bipolar transistors. The proposed ESD protection device was developed through a 0.18-μm CMOS process, and a timeline pulse system was used to verify its properties. The measurement results show that the proposed ESD protection device exhibits an improved tolerance and a high holding voltage and is expected to be reliable in 5 V-class applications.https://ieeexplore.ieee.org/document/8713486/SCRDDSCRESD protection devicehigh holding voltagelow dynamic resistanceon-resistance |
| spellingShingle | Kyoung-Il Do Byung-Seok Lee Yong-Seo Koo A New Dual-Direction SCR With High Holding Voltage and Low Dynamic Resistance for 5 V Application IEEE Journal of the Electron Devices Society SCR DDSCR ESD protection device high holding voltage low dynamic resistance on-resistance |
| title | A New Dual-Direction SCR With High Holding Voltage and Low Dynamic Resistance for 5 V Application |
| title_full | A New Dual-Direction SCR With High Holding Voltage and Low Dynamic Resistance for 5 V Application |
| title_fullStr | A New Dual-Direction SCR With High Holding Voltage and Low Dynamic Resistance for 5 V Application |
| title_full_unstemmed | A New Dual-Direction SCR With High Holding Voltage and Low Dynamic Resistance for 5 V Application |
| title_short | A New Dual-Direction SCR With High Holding Voltage and Low Dynamic Resistance for 5 V Application |
| title_sort | new dual direction scr with high holding voltage and low dynamic resistance for 5 v application |
| topic | SCR DDSCR ESD protection device high holding voltage low dynamic resistance on-resistance |
| url | https://ieeexplore.ieee.org/document/8713486/ |
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