Electron Transport in Naphthalene Diimide Derivatives
Two naphthalene diimides derivatives containing two different (alkyl and alkoxyphenyl) N-substituents were studied, namely, <i>N</i>,<i>N</i>′-bis(<i>sec</i>-butyl)-1,4,5,8-naphthalenetetracarboxylic acid diimide (NDI-s-Bu) and <i>N</i>,<i>N</...
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| Online Access: | https://www.mdpi.com/1996-1944/14/14/4026 |
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| author | Jaroslaw Jung Arkadiusz Selerowicz Paulina Maczugowska Krzysztof Halagan Renata Rybakiewicz-Sekita Malgorzata Zagorska Anna Stefaniuk-Grams |
| author_facet | Jaroslaw Jung Arkadiusz Selerowicz Paulina Maczugowska Krzysztof Halagan Renata Rybakiewicz-Sekita Malgorzata Zagorska Anna Stefaniuk-Grams |
| author_sort | Jaroslaw Jung |
| collection | DOAJ |
| description | Two naphthalene diimides derivatives containing two different (alkyl and alkoxyphenyl) N-substituents were studied, namely, <i>N</i>,<i>N</i>′-bis(<i>sec</i>-butyl)-1,4,5,8-naphthalenetetracarboxylic acid diimide (NDI-s-Bu) and <i>N</i>,<i>N</i>′-bis(4-n-hexyloxyphenyl)-1,4,5,8-naphthalenetetracarboxylic acid diimide (NDI-4-n-OHePh). These compounds are known to exhibit electron transport due to their electron-deficient character evidenced by high electron affinity (EA) values, determined by electrochemical methods and a low-lying lowest unoccupied molecular orbital (LUMO) level, predicted by density functional theory (DFT) calculations. These parameters make the studied organic semiconductors stable in operating conditions and resistant to electron trapping, facilitating, in this manner, electron transport in thin solid layers. Current–voltage characteristics, obtained for the manufactured electron-only devices operating in the low voltage range, yielded mobilities of 4.3 × 10<sup>−4</sup> cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup> and 4.6 × 10<sup>−6</sup> cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup> for (NDI-s-Bu) and (NDI-4-n-OHePh), respectively. Their electron transport characteristics were described using the drift–diffusion model. The studied organic semiconductors can be considered as excellent candidates for the electron transporting layers in organic photovoltaic cells and light-emitting diodes |
| first_indexed | 2024-03-10T09:33:45Z |
| format | Article |
| id | doaj.art-c52a43694338413dafab5c6900e38fc0 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T09:33:45Z |
| publishDate | 2021-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-c52a43694338413dafab5c6900e38fc02023-11-22T04:18:31ZengMDPI AGMaterials1996-19442021-07-011414402610.3390/ma14144026Electron Transport in Naphthalene Diimide DerivativesJaroslaw Jung0Arkadiusz Selerowicz1Paulina Maczugowska2Krzysztof Halagan3Renata Rybakiewicz-Sekita4Malgorzata Zagorska5Anna Stefaniuk-Grams6Department of Molecular Physics, Faculty of Chemistry, Lodz University of Technology, Zeromskiego 116, 90-924 Lodz, PolandDepartment of Molecular Physics, Faculty of Chemistry, Lodz University of Technology, Zeromskiego 116, 90-924 Lodz, PolandDepartment of Molecular Physics, Faculty of Chemistry, Lodz University of Technology, Zeromskiego 116, 90-924 Lodz, PolandDepartment of Molecular Physics, Faculty of Chemistry, Lodz University of Technology, Zeromskiego 116, 90-924 Lodz, PolandFaculty of Mathematics and Natural Sciences, School of Sciences, Institute of Chemical Sciences, Cardinal Stefan Wyszynski University in Warsaw, Wóycickiego 1/3, 01-815 Warsaw, PolandFaculty of Chemistry, Warsaw University of Technology, Noakowskiego 3, 00-664 Warsaw, PolandDepartment of Molecular Physics, Faculty of Chemistry, Lodz University of Technology, Zeromskiego 116, 90-924 Lodz, PolandTwo naphthalene diimides derivatives containing two different (alkyl and alkoxyphenyl) N-substituents were studied, namely, <i>N</i>,<i>N</i>′-bis(<i>sec</i>-butyl)-1,4,5,8-naphthalenetetracarboxylic acid diimide (NDI-s-Bu) and <i>N</i>,<i>N</i>′-bis(4-n-hexyloxyphenyl)-1,4,5,8-naphthalenetetracarboxylic acid diimide (NDI-4-n-OHePh). These compounds are known to exhibit electron transport due to their electron-deficient character evidenced by high electron affinity (EA) values, determined by electrochemical methods and a low-lying lowest unoccupied molecular orbital (LUMO) level, predicted by density functional theory (DFT) calculations. These parameters make the studied organic semiconductors stable in operating conditions and resistant to electron trapping, facilitating, in this manner, electron transport in thin solid layers. Current–voltage characteristics, obtained for the manufactured electron-only devices operating in the low voltage range, yielded mobilities of 4.3 × 10<sup>−4</sup> cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup> and 4.6 × 10<sup>−6</sup> cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup> for (NDI-s-Bu) and (NDI-4-n-OHePh), respectively. Their electron transport characteristics were described using the drift–diffusion model. The studied organic semiconductors can be considered as excellent candidates for the electron transporting layers in organic photovoltaic cells and light-emitting diodeshttps://www.mdpi.com/1996-1944/14/14/4026naphhthalene diimide derivativesHOMO and LUMO levelsDFT calculationselectron-only deviceselectron mobility |
| spellingShingle | Jaroslaw Jung Arkadiusz Selerowicz Paulina Maczugowska Krzysztof Halagan Renata Rybakiewicz-Sekita Malgorzata Zagorska Anna Stefaniuk-Grams Electron Transport in Naphthalene Diimide Derivatives Materials naphhthalene diimide derivatives HOMO and LUMO levels DFT calculations electron-only devices electron mobility |
| title | Electron Transport in Naphthalene Diimide Derivatives |
| title_full | Electron Transport in Naphthalene Diimide Derivatives |
| title_fullStr | Electron Transport in Naphthalene Diimide Derivatives |
| title_full_unstemmed | Electron Transport in Naphthalene Diimide Derivatives |
| title_short | Electron Transport in Naphthalene Diimide Derivatives |
| title_sort | electron transport in naphthalene diimide derivatives |
| topic | naphhthalene diimide derivatives HOMO and LUMO levels DFT calculations electron-only devices electron mobility |
| url | https://www.mdpi.com/1996-1944/14/14/4026 |
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