Facile Synthesis of Solution-Processed Silica and Polyvinyl Phenol Hybrid Dielectric for Flexible Organic Transistors
A high-quality dielectric layer is essential for organic thin-film transistors (OTFTs) operated at a low-power consumption level. In this study, a facile improved technique for the synthesis of solution-processed silica is proposed. By optimizing the synthesis and processing technique fewer pores we...
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MDPI AG
2020-04-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/10/4/806 |
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| author | Xiong Chen Yu Zhang Xiangfeng Guan Hao Zhang |
| author_facet | Xiong Chen Yu Zhang Xiangfeng Guan Hao Zhang |
| author_sort | Xiong Chen |
| collection | DOAJ |
| description | A high-quality dielectric layer is essential for organic thin-film transistors (OTFTs) operated at a low-power consumption level. In this study, a facile improved technique for the synthesis of solution-processed silica is proposed. By optimizing the synthesis and processing technique fewer pores were found on the surface of the film, particularly no large holes were observable after improving the annealing process, and the improved solution–gelation (sol–gel) SiO<i><sub>x</sub></i> dielectric achieved a higher breakdown strength (1.6 MV/cm) and lower leakage current density (10<sup>−8</sup> A/cm<sup>2</sup> at 1.5 MV/cm). Consequently, a pentacene based OTFT with a high field effect mobility (~1.8 cm<sup>2</sup>/Vs), a low threshold voltage (−1.7 V), a steeper subthreshold slope (~0.4 V/dec) and a relatively high on/off ratio (~10<sup>5</sup>) was fabricated by applying a hybrid gate insulator which consisted of improved sol–gel SiO<i><sub>x</sub></i> and polyvinyl phenol (PVP). This could be ascribed to both the high k of SiO<i><sub>x</sub></i> and the smoother, hydrophobic dielectric surface with low trap density, which was proved by atomic force microscopy (AFM) and a water contact angle test, respectively. Additionally, we systematically studied and evaluated the stability of devices in the compressed state. The devices based on dielectric fabricated by conventional sol–gel processes were more susceptible to the curvature. While the improved device presented an excellent mechanic strength, it could still function at the higher bending compression without a significant degradation in performance. Thus, this solution-process technology provides an effective approach to fabricate high-quality dielectric and offers great potential for low-cost, fast and portable organic electronic applications. |
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| spelling | doaj.art-c52c63bbc299412490c23ea3e3d060f52023-11-19T22:29:26ZengMDPI AGNanomaterials2079-49912020-04-0110480610.3390/nano10040806Facile Synthesis of Solution-Processed Silica and Polyvinyl Phenol Hybrid Dielectric for Flexible Organic TransistorsXiong Chen0Yu Zhang1Xiangfeng Guan2Hao Zhang3Organic optoelectronics research center in Fujian Universities, College of electronics and information science, Fujian Jiangxia University, Fuzhou 350108, ChinaOrganic optoelectronics research center in Fujian Universities, College of electronics and information science, Fujian Jiangxia University, Fuzhou 350108, ChinaOrganic optoelectronics research center in Fujian Universities, College of electronics and information science, Fujian Jiangxia University, Fuzhou 350108, ChinaOrganic optoelectronics research center in Fujian Universities, College of electronics and information science, Fujian Jiangxia University, Fuzhou 350108, ChinaA high-quality dielectric layer is essential for organic thin-film transistors (OTFTs) operated at a low-power consumption level. In this study, a facile improved technique for the synthesis of solution-processed silica is proposed. By optimizing the synthesis and processing technique fewer pores were found on the surface of the film, particularly no large holes were observable after improving the annealing process, and the improved solution–gelation (sol–gel) SiO<i><sub>x</sub></i> dielectric achieved a higher breakdown strength (1.6 MV/cm) and lower leakage current density (10<sup>−8</sup> A/cm<sup>2</sup> at 1.5 MV/cm). Consequently, a pentacene based OTFT with a high field effect mobility (~1.8 cm<sup>2</sup>/Vs), a low threshold voltage (−1.7 V), a steeper subthreshold slope (~0.4 V/dec) and a relatively high on/off ratio (~10<sup>5</sup>) was fabricated by applying a hybrid gate insulator which consisted of improved sol–gel SiO<i><sub>x</sub></i> and polyvinyl phenol (PVP). This could be ascribed to both the high k of SiO<i><sub>x</sub></i> and the smoother, hydrophobic dielectric surface with low trap density, which was proved by atomic force microscopy (AFM) and a water contact angle test, respectively. Additionally, we systematically studied and evaluated the stability of devices in the compressed state. The devices based on dielectric fabricated by conventional sol–gel processes were more susceptible to the curvature. While the improved device presented an excellent mechanic strength, it could still function at the higher bending compression without a significant degradation in performance. Thus, this solution-process technology provides an effective approach to fabricate high-quality dielectric and offers great potential for low-cost, fast and portable organic electronic applications.https://www.mdpi.com/2079-4991/10/4/806sol–gel methodsilicahigh dielectric constantorganic thin film transistors |
| spellingShingle | Xiong Chen Yu Zhang Xiangfeng Guan Hao Zhang Facile Synthesis of Solution-Processed Silica and Polyvinyl Phenol Hybrid Dielectric for Flexible Organic Transistors Nanomaterials sol–gel method silica high dielectric constant organic thin film transistors |
| title | Facile Synthesis of Solution-Processed Silica and Polyvinyl Phenol Hybrid Dielectric for Flexible Organic Transistors |
| title_full | Facile Synthesis of Solution-Processed Silica and Polyvinyl Phenol Hybrid Dielectric for Flexible Organic Transistors |
| title_fullStr | Facile Synthesis of Solution-Processed Silica and Polyvinyl Phenol Hybrid Dielectric for Flexible Organic Transistors |
| title_full_unstemmed | Facile Synthesis of Solution-Processed Silica and Polyvinyl Phenol Hybrid Dielectric for Flexible Organic Transistors |
| title_short | Facile Synthesis of Solution-Processed Silica and Polyvinyl Phenol Hybrid Dielectric for Flexible Organic Transistors |
| title_sort | facile synthesis of solution processed silica and polyvinyl phenol hybrid dielectric for flexible organic transistors |
| topic | sol–gel method silica high dielectric constant organic thin film transistors |
| url | https://www.mdpi.com/2079-4991/10/4/806 |
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