Optical and spin inhomogeneous linewidths in 171Yb3+:Y2SiO5

Single crystals of 171Yb3+:Y2SiO5 are promising systems for quantum technologies as an efficient optical to spin interface. This is due to the long optical and spin coherence lifetimes, or narrow homogeneous linewidths, observed in this material at zero magnetic field. Inhomogeneous linewidths are a...

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Main Authors: Eloïse Lafitte-Houssat, Alban Ferrier, Sacha Welinski, Loïc Morvan, Mikael Afzelius, Perrine Berger, Philippe Goldner
Format: Article
Language:English
Published: Elsevier 2022-05-01
Series:Optical Materials: X
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2590147822000183
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author Eloïse Lafitte-Houssat
Alban Ferrier
Sacha Welinski
Loïc Morvan
Mikael Afzelius
Perrine Berger
Philippe Goldner
author_facet Eloïse Lafitte-Houssat
Alban Ferrier
Sacha Welinski
Loïc Morvan
Mikael Afzelius
Perrine Berger
Philippe Goldner
author_sort Eloïse Lafitte-Houssat
collection DOAJ
description Single crystals of 171Yb3+:Y2SiO5 are promising systems for quantum technologies as an efficient optical to spin interface. This is due to the long optical and spin coherence lifetimes, or narrow homogeneous linewidths, observed in this material at zero magnetic field. Inhomogeneous linewidths are also of importance since they affect peak absorption, available bandwidth or spin–spin interactions. In this work, we investigate inhomogeneous linewidths in a series of 171Yb3+:Y2SiO5 single crystals grown by the Czochralski method with the purpose of identifying the broadening mechanisms in the regime of ultra-low doping, i.e. in the ppm range. In a series of samples obtained with varying doping level, growth atmosphere, and cut at different locations in a crystal boule, optical inhomogeneous linewidths between 0.6 and 1.3 GHz are observed. This study suggests that these variations are due to changes in dislocation densities. Spin inhomogeneous linewidths, recorded using electron paramagnetic resonance, did not show the differences between samples observed in the optical domain. They were otherwise found to vary as a function of magnetic field orientation, enabling determination of directions that minimize e.g. detrimental spin–spin interactions. These results suggest ways to reduce optical inhomogeneous linewidths in 171Yb3+:Y2SiO5, which is of interest for high efficiency quantum memories and optical to microwave quantum transducers.
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spelling doaj.art-c565343b3ffd4a668d77c3b4a16df20b2022-12-22T00:39:04ZengElsevierOptical Materials: X2590-14782022-05-0114100153Optical and spin inhomogeneous linewidths in 171Yb3+:Y2SiO5Eloïse Lafitte-Houssat0Alban Ferrier1Sacha Welinski2Loïc Morvan3Mikael Afzelius4Perrine Berger5Philippe Goldner6Chimie ParisTech, PSL University, CNRS, Institut de Recherche de Chimie Paris, 75005 Paris, France; Thales Research and Technology, 91767 Palaiseau, FranceChimie ParisTech, PSL University, CNRS, Institut de Recherche de Chimie Paris, 75005 Paris, France; Faculté des Sciences et Ingénierie, Sorbonne Université, UFR 933, 75005 Paris, FranceThales Research and Technology, 91767 Palaiseau, FranceThales Research and Technology, 91767 Palaiseau, FranceDepartment of Applied Physics, University of Geneva, CH-1211, Geneva 4, SwitzerlandThales Research and Technology, 91767 Palaiseau, FranceChimie ParisTech, PSL University, CNRS, Institut de Recherche de Chimie Paris, 75005 Paris, France; Corresponding author.Single crystals of 171Yb3+:Y2SiO5 are promising systems for quantum technologies as an efficient optical to spin interface. This is due to the long optical and spin coherence lifetimes, or narrow homogeneous linewidths, observed in this material at zero magnetic field. Inhomogeneous linewidths are also of importance since they affect peak absorption, available bandwidth or spin–spin interactions. In this work, we investigate inhomogeneous linewidths in a series of 171Yb3+:Y2SiO5 single crystals grown by the Czochralski method with the purpose of identifying the broadening mechanisms in the regime of ultra-low doping, i.e. in the ppm range. In a series of samples obtained with varying doping level, growth atmosphere, and cut at different locations in a crystal boule, optical inhomogeneous linewidths between 0.6 and 1.3 GHz are observed. This study suggests that these variations are due to changes in dislocation densities. Spin inhomogeneous linewidths, recorded using electron paramagnetic resonance, did not show the differences between samples observed in the optical domain. They were otherwise found to vary as a function of magnetic field orientation, enabling determination of directions that minimize e.g. detrimental spin–spin interactions. These results suggest ways to reduce optical inhomogeneous linewidths in 171Yb3+:Y2SiO5, which is of interest for high efficiency quantum memories and optical to microwave quantum transducers.http://www.sciencedirect.com/science/article/pii/S2590147822000183Rare earth ionsQuantum technologiesOptical spectroscopyElectron paramagnetic resonance
spellingShingle Eloïse Lafitte-Houssat
Alban Ferrier
Sacha Welinski
Loïc Morvan
Mikael Afzelius
Perrine Berger
Philippe Goldner
Optical and spin inhomogeneous linewidths in 171Yb3+:Y2SiO5
Optical Materials: X
Rare earth ions
Quantum technologies
Optical spectroscopy
Electron paramagnetic resonance
title Optical and spin inhomogeneous linewidths in 171Yb3+:Y2SiO5
title_full Optical and spin inhomogeneous linewidths in 171Yb3+:Y2SiO5
title_fullStr Optical and spin inhomogeneous linewidths in 171Yb3+:Y2SiO5
title_full_unstemmed Optical and spin inhomogeneous linewidths in 171Yb3+:Y2SiO5
title_short Optical and spin inhomogeneous linewidths in 171Yb3+:Y2SiO5
title_sort optical and spin inhomogeneous linewidths in 171yb3 y2sio5
topic Rare earth ions
Quantum technologies
Optical spectroscopy
Electron paramagnetic resonance
url http://www.sciencedirect.com/science/article/pii/S2590147822000183
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