A Physics-Based Model for Mobile-Ionic Field-Effect Transistors With Steep Subthreshold Swing

A Physics-Based Model for Mobile-Ionic Field-Effect Transistors With Steep Subthreshold Swing

A physics-based model and the corresponding simulation framework for the mobile-ionic field-effect transistor (MIFET) exhibiting the ferroelectric-like behaviors are innovatively proposed based on two-dimensional (2D) Poisson’s equation and non-equilibrium Green’s function (NEG...

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Bibliographic Details
Main Authors: Jiajia Chen, Huan Liu, Chengji Jin, Xiaole Jia, Xiao Yu, Yue Peng, Ran Cheng, Bing Chen, Yan Liu, Yue Hao, Genquan Han
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Subthreshold swing (SS)
ZrO₂
ferroelectric-like
mobile-ionic field-effect transistor (MIFET)
Online Access:https://ieeexplore.ieee.org/document/9870168/

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