N-Graphene Nanowalls via Plasma Nitrogen Incorporation and Substitution: The Experimental Evidence
Abstract Incorporating nitrogen (N) atom in graphene is considered a key technique for tuning its electrical properties. However, this is still a great challenge, and it is unclear how to build N-graphene with desired nitrogen configurations. There is a lack of experimental evidence to explain the i...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2020-02-01
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| Series: | Nano-Micro Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1007/s40820-020-0395-5 |
| _version_ | 1818926406397067264 |
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| author | Neelakandan M. Santhosh Gregor Filipič Eva Kovacevic Andrea Jagodar Johannes Berndt Thomas Strunskus Hiroki Kondo Masaru Hori Elena Tatarova Uroš Cvelbar |
| author_facet | Neelakandan M. Santhosh Gregor Filipič Eva Kovacevic Andrea Jagodar Johannes Berndt Thomas Strunskus Hiroki Kondo Masaru Hori Elena Tatarova Uroš Cvelbar |
| author_sort | Neelakandan M. Santhosh |
| collection | DOAJ |
| description | Abstract Incorporating nitrogen (N) atom in graphene is considered a key technique for tuning its electrical properties. However, this is still a great challenge, and it is unclear how to build N-graphene with desired nitrogen configurations. There is a lack of experimental evidence to explain the influence and mechanism of structural defects for nitrogen incorporation into graphene compared to the derived DFT theories. Herein, this gap is bridged through a systematic study of different nitrogen-containing gaseous plasma post-treatments on graphene nanowalls (CNWs) to produce N-CNWs with incorporated and substituted nitrogen. The structural and morphological analyses describe a remarkable difference in the plasma–surface interaction, nitrogen concentration and nitrogen incorporation mechanism in CNWs by using different nitrogen-containing plasma. Electrical conductivity measurements revealed that the conductivity of the N-graphene is strongly influenced by the position and concentration of C–N bonding configurations. These findings open up a new pathway for the synthesis of N-graphene using plasma post-treatment to control the concentration and configuration of incorporated nitrogen for application-specific properties. |
| first_indexed | 2024-12-20T02:56:37Z |
| format | Article |
| id | doaj.art-c572d065a1884157aa1a2c16732cced9 |
| institution | Directory Open Access Journal |
| issn | 2311-6706 2150-5551 |
| language | English |
| last_indexed | 2024-12-20T02:56:37Z |
| publishDate | 2020-02-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nano-Micro Letters |
| spelling | doaj.art-c572d065a1884157aa1a2c16732cced92022-12-21T19:55:54ZengSpringerOpenNano-Micro Letters2311-67062150-55512020-02-0112111710.1007/s40820-020-0395-5N-Graphene Nanowalls via Plasma Nitrogen Incorporation and Substitution: The Experimental EvidenceNeelakandan M. Santhosh0Gregor Filipič1Eva Kovacevic2Andrea Jagodar3Johannes Berndt4Thomas Strunskus5Hiroki Kondo6Masaru Hori7Elena Tatarova8Uroš Cvelbar9Jožef Stefan InstituteJožef Stefan InstituteGREMI CNRS-University of OrleansGREMI CNRS-University of OrleansGREMI CNRS-University of OrleansInstitute for Materials Science, Christian Albrechts University KielDepartment of Electrical Engineering and Computer Science, University of NagoyaDepartment of Electrical Engineering and Computer Science, University of NagoyaInstituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de LisboaJožef Stefan InstituteAbstract Incorporating nitrogen (N) atom in graphene is considered a key technique for tuning its electrical properties. However, this is still a great challenge, and it is unclear how to build N-graphene with desired nitrogen configurations. There is a lack of experimental evidence to explain the influence and mechanism of structural defects for nitrogen incorporation into graphene compared to the derived DFT theories. Herein, this gap is bridged through a systematic study of different nitrogen-containing gaseous plasma post-treatments on graphene nanowalls (CNWs) to produce N-CNWs with incorporated and substituted nitrogen. The structural and morphological analyses describe a remarkable difference in the plasma–surface interaction, nitrogen concentration and nitrogen incorporation mechanism in CNWs by using different nitrogen-containing plasma. Electrical conductivity measurements revealed that the conductivity of the N-graphene is strongly influenced by the position and concentration of C–N bonding configurations. These findings open up a new pathway for the synthesis of N-graphene using plasma post-treatment to control the concentration and configuration of incorporated nitrogen for application-specific properties.http://link.springer.com/article/10.1007/s40820-020-0395-5GrapheneGraphene nanowallsPlasma post-treatmentNitrogen incorporationRaman spectroscopyVacancy defects |
| spellingShingle | Neelakandan M. Santhosh Gregor Filipič Eva Kovacevic Andrea Jagodar Johannes Berndt Thomas Strunskus Hiroki Kondo Masaru Hori Elena Tatarova Uroš Cvelbar N-Graphene Nanowalls via Plasma Nitrogen Incorporation and Substitution: The Experimental Evidence Nano-Micro Letters Graphene Graphene nanowalls Plasma post-treatment Nitrogen incorporation Raman spectroscopy Vacancy defects |
| title | N-Graphene Nanowalls via Plasma Nitrogen Incorporation and Substitution: The Experimental Evidence |
| title_full | N-Graphene Nanowalls via Plasma Nitrogen Incorporation and Substitution: The Experimental Evidence |
| title_fullStr | N-Graphene Nanowalls via Plasma Nitrogen Incorporation and Substitution: The Experimental Evidence |
| title_full_unstemmed | N-Graphene Nanowalls via Plasma Nitrogen Incorporation and Substitution: The Experimental Evidence |
| title_short | N-Graphene Nanowalls via Plasma Nitrogen Incorporation and Substitution: The Experimental Evidence |
| title_sort | n graphene nanowalls via plasma nitrogen incorporation and substitution the experimental evidence |
| topic | Graphene Graphene nanowalls Plasma post-treatment Nitrogen incorporation Raman spectroscopy Vacancy defects |
| url | http://link.springer.com/article/10.1007/s40820-020-0395-5 |
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