Lamellar Orientation of a Block Copolymer via an Electron-Beam Induced Polarity Switch in a Nitrophenyl Self-Assembled Monolayer or Si Etching Treatments
Directed self-assembly (DSA) was investigated on self-assembled monolayers (SAMs) chemically modified by electron beam (EB) irradiation, which is composed of 6-(4-nitrophenoxy) hexane-1-thiol (NPHT). Irradiating a NPHT by EB could successfully induce the orientation and selective patterning of block...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-03-01
|
| Series: | Quantum Beam Science |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2412-382X/4/2/19 |
| _version_ | 1797626559427772416 |
|---|---|
| author | Hiroki Yamamoto Guy Dawson Takahiro Kozawa Alex P. G. Robinson |
| author_facet | Hiroki Yamamoto Guy Dawson Takahiro Kozawa Alex P. G. Robinson |
| author_sort | Hiroki Yamamoto |
| collection | DOAJ |
| description | Directed self-assembly (DSA) was investigated on self-assembled monolayers (SAMs) chemically modified by electron beam (EB) irradiation, which is composed of 6-(4-nitrophenoxy) hexane-1-thiol (NPHT). Irradiating a NPHT by EB could successfully induce the orientation and selective patterning of block copolymer domains. We clarified that spatially-selective lamellar orientations of polystyrene-<i>block</i>-poly(methyl methacrylate) (PS-<i>b</i>-PMMA) could be achieved by a change of an underlying SAM. The change of an underlying SAM is composed of the transition of an NO<sub>2</sub> group to an NH<sub>2</sub> group, which is induced by EB. The modification in the polarity of different regions of the SAM with EB lithography controlled the lamellar orientation of PS-<i>b</i>-PMMA. The reduction of the NPHT SAM plays an important role in the orientation of block copolymer. This method might significantly simplify block copolymer DSA processes when it is compared to the conventional DSA process. By investigating the lamellae orientation with EB, it is clarified that only suitable annealing temperatures and irradiation doses lead to the vertical orientation. We also fabricated pre-patterned Si substrates by EB lithographic patterning and reactive ion etching (RIE). DSA onto such pre-patterned Si substrates was proven to be successful for subdivision of the lithographic patterns into line and space patterns. |
| first_indexed | 2024-03-11T10:12:08Z |
| format | Article |
| id | doaj.art-c57360b448f34ad0a988ad5f9f7cd770 |
| institution | Directory Open Access Journal |
| issn | 2412-382X |
| language | English |
| last_indexed | 2024-03-11T10:12:08Z |
| publishDate | 2020-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Quantum Beam Science |
| spelling | doaj.art-c57360b448f34ad0a988ad5f9f7cd7702023-11-16T14:26:50ZengMDPI AGQuantum Beam Science2412-382X2020-03-01421910.3390/qubs4020019Lamellar Orientation of a Block Copolymer via an Electron-Beam Induced Polarity Switch in a Nitrophenyl Self-Assembled Monolayer or Si Etching TreatmentsHiroki Yamamoto0Guy Dawson1Takahiro Kozawa2Alex P. G. Robinson3National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki-machi, Takasaki, Gunma 370-1292, JapanSchool of Chemical Engineering, University of Birmingham, Edgbaston, Birmingham B15 2TT, UKThe Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, JapanSchool of Chemical Engineering, University of Birmingham, Edgbaston, Birmingham B15 2TT, UKDirected self-assembly (DSA) was investigated on self-assembled monolayers (SAMs) chemically modified by electron beam (EB) irradiation, which is composed of 6-(4-nitrophenoxy) hexane-1-thiol (NPHT). Irradiating a NPHT by EB could successfully induce the orientation and selective patterning of block copolymer domains. We clarified that spatially-selective lamellar orientations of polystyrene-<i>block</i>-poly(methyl methacrylate) (PS-<i>b</i>-PMMA) could be achieved by a change of an underlying SAM. The change of an underlying SAM is composed of the transition of an NO<sub>2</sub> group to an NH<sub>2</sub> group, which is induced by EB. The modification in the polarity of different regions of the SAM with EB lithography controlled the lamellar orientation of PS-<i>b</i>-PMMA. The reduction of the NPHT SAM plays an important role in the orientation of block copolymer. This method might significantly simplify block copolymer DSA processes when it is compared to the conventional DSA process. By investigating the lamellae orientation with EB, it is clarified that only suitable annealing temperatures and irradiation doses lead to the vertical orientation. We also fabricated pre-patterned Si substrates by EB lithographic patterning and reactive ion etching (RIE). DSA onto such pre-patterned Si substrates was proven to be successful for subdivision of the lithographic patterns into line and space patterns.https://www.mdpi.com/2412-382X/4/2/19electron beamdirected self-assemblyblock copolymerself-assembled monolayerslithographypolystyrene-<i>block</i>-poly(methyl methacrylate) |
| spellingShingle | Hiroki Yamamoto Guy Dawson Takahiro Kozawa Alex P. G. Robinson Lamellar Orientation of a Block Copolymer via an Electron-Beam Induced Polarity Switch in a Nitrophenyl Self-Assembled Monolayer or Si Etching Treatments Quantum Beam Science electron beam directed self-assembly block copolymer self-assembled monolayers lithography polystyrene-<i>block</i>-poly(methyl methacrylate) |
| title | Lamellar Orientation of a Block Copolymer via an Electron-Beam Induced Polarity Switch in a Nitrophenyl Self-Assembled Monolayer or Si Etching Treatments |
| title_full | Lamellar Orientation of a Block Copolymer via an Electron-Beam Induced Polarity Switch in a Nitrophenyl Self-Assembled Monolayer or Si Etching Treatments |
| title_fullStr | Lamellar Orientation of a Block Copolymer via an Electron-Beam Induced Polarity Switch in a Nitrophenyl Self-Assembled Monolayer or Si Etching Treatments |
| title_full_unstemmed | Lamellar Orientation of a Block Copolymer via an Electron-Beam Induced Polarity Switch in a Nitrophenyl Self-Assembled Monolayer or Si Etching Treatments |
| title_short | Lamellar Orientation of a Block Copolymer via an Electron-Beam Induced Polarity Switch in a Nitrophenyl Self-Assembled Monolayer or Si Etching Treatments |
| title_sort | lamellar orientation of a block copolymer via an electron beam induced polarity switch in a nitrophenyl self assembled monolayer or si etching treatments |
| topic | electron beam directed self-assembly block copolymer self-assembled monolayers lithography polystyrene-<i>block</i>-poly(methyl methacrylate) |
| url | https://www.mdpi.com/2412-382X/4/2/19 |
| work_keys_str_mv | AT hirokiyamamoto lamellarorientationofablockcopolymerviaanelectronbeaminducedpolarityswitchinanitrophenylselfassembledmonolayerorsietchingtreatments AT guydawson lamellarorientationofablockcopolymerviaanelectronbeaminducedpolarityswitchinanitrophenylselfassembledmonolayerorsietchingtreatments AT takahirokozawa lamellarorientationofablockcopolymerviaanelectronbeaminducedpolarityswitchinanitrophenylselfassembledmonolayerorsietchingtreatments AT alexpgrobinson lamellarorientationofablockcopolymerviaanelectronbeaminducedpolarityswitchinanitrophenylselfassembledmonolayerorsietchingtreatments |