A temperature sensor based on Si/PS/SiO2 photonic crystals

Abstract The present research deals with the extremely sensitive temperature-sensing capabilities of defective one-dimensional photonic crystal structures (Si/PS/SiO2). The proposed structure is realized by putting a defective layer of material silicon Dioxide (SiO2) in the middle of a structure con...

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Main Authors: Arafa H. Aly, B. A. Mohamed, M. Al-Dossari, D. Mohamed
Format: Article
Language:English
Published: Nature Portfolio 2023-12-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-023-48836-5
_version_ 1797398037468807168
author Arafa H. Aly
B. A. Mohamed
M. Al-Dossari
D. Mohamed
author_facet Arafa H. Aly
B. A. Mohamed
M. Al-Dossari
D. Mohamed
author_sort Arafa H. Aly
collection DOAJ
description Abstract The present research deals with the extremely sensitive temperature-sensing capabilities of defective one-dimensional photonic crystal structures (Si/PS/SiO2). The proposed structure is realized by putting a defective layer of material silicon Dioxide (SiO2) in the middle of a structure consisting of alternating layers of silicon (Si) and porous silica (PS). The transfer matrix method has been employed to examine the transmission characteristics of the proposed defective one-dimensional photonic crystal in addition to MATLAB software. The transmission spectra of the proposed structure in the visible light domain are computed throughout a temperature range of 25–900 °C, and we study the thermal properties related to the defective mode. Additionally, the impacts of changing the defect layer's thickness are examined. Due to the effects of thermal expansion and the thermo-optical coefficient, the defect mode varies significantly as the temperature increases. Our investigation shows that the proposed structure considerably impacts the transmission intensity of the defective mode. The theoretically obtained numeric values of the quality factor and sensitivity are 2216.6 and 0.085 nm/°C, respectively. The challenges presented by conventional temperature sensors could be overcome by the suggested defective photonic crystal sensor. These results are enough to support our claim that the present design can be used as an ultra-sensitive temperature sensor.
first_indexed 2024-03-09T01:18:55Z
format Article
id doaj.art-c5914877fc824820813155e20a726690
institution Directory Open Access Journal
issn 2045-2322
language English
last_indexed 2024-03-09T01:18:55Z
publishDate 2023-12-01
publisher Nature Portfolio
record_format Article
series Scientific Reports
spelling doaj.art-c5914877fc824820813155e20a7266902023-12-10T12:18:05ZengNature PortfolioScientific Reports2045-23222023-12-011311910.1038/s41598-023-48836-5A temperature sensor based on Si/PS/SiO2 photonic crystalsArafa H. Aly0B. A. Mohamed1M. Al-Dossari2D. Mohamed3TH-PPM Group, Physics Department, Faculty of Sciences, Beni-Suef UniversityTH-PPM Group, Physics Department, Faculty of Sciences, Beni-Suef UniversityDepartment of Physics, Faculty of Science, King Khalid UniversityTH-PPM Group, Physics Department, Faculty of Sciences, Beni-Suef UniversityAbstract The present research deals with the extremely sensitive temperature-sensing capabilities of defective one-dimensional photonic crystal structures (Si/PS/SiO2). The proposed structure is realized by putting a defective layer of material silicon Dioxide (SiO2) in the middle of a structure consisting of alternating layers of silicon (Si) and porous silica (PS). The transfer matrix method has been employed to examine the transmission characteristics of the proposed defective one-dimensional photonic crystal in addition to MATLAB software. The transmission spectra of the proposed structure in the visible light domain are computed throughout a temperature range of 25–900 °C, and we study the thermal properties related to the defective mode. Additionally, the impacts of changing the defect layer's thickness are examined. Due to the effects of thermal expansion and the thermo-optical coefficient, the defect mode varies significantly as the temperature increases. Our investigation shows that the proposed structure considerably impacts the transmission intensity of the defective mode. The theoretically obtained numeric values of the quality factor and sensitivity are 2216.6 and 0.085 nm/°C, respectively. The challenges presented by conventional temperature sensors could be overcome by the suggested defective photonic crystal sensor. These results are enough to support our claim that the present design can be used as an ultra-sensitive temperature sensor.https://doi.org/10.1038/s41598-023-48836-5
spellingShingle Arafa H. Aly
B. A. Mohamed
M. Al-Dossari
D. Mohamed
A temperature sensor based on Si/PS/SiO2 photonic crystals
Scientific Reports
title A temperature sensor based on Si/PS/SiO2 photonic crystals
title_full A temperature sensor based on Si/PS/SiO2 photonic crystals
title_fullStr A temperature sensor based on Si/PS/SiO2 photonic crystals
title_full_unstemmed A temperature sensor based on Si/PS/SiO2 photonic crystals
title_short A temperature sensor based on Si/PS/SiO2 photonic crystals
title_sort temperature sensor based on si ps sio2 photonic crystals
url https://doi.org/10.1038/s41598-023-48836-5
work_keys_str_mv AT arafahaly atemperaturesensorbasedonsipssio2photoniccrystals
AT bamohamed atemperaturesensorbasedonsipssio2photoniccrystals
AT maldossari atemperaturesensorbasedonsipssio2photoniccrystals
AT dmohamed atemperaturesensorbasedonsipssio2photoniccrystals
AT arafahaly temperaturesensorbasedonsipssio2photoniccrystals
AT bamohamed temperaturesensorbasedonsipssio2photoniccrystals
AT maldossari temperaturesensorbasedonsipssio2photoniccrystals
AT dmohamed temperaturesensorbasedonsipssio2photoniccrystals