A temperature sensor based on Si/PS/SiO2 photonic crystals
Abstract The present research deals with the extremely sensitive temperature-sensing capabilities of defective one-dimensional photonic crystal structures (Si/PS/SiO2). The proposed structure is realized by putting a defective layer of material silicon Dioxide (SiO2) in the middle of a structure con...
Main Authors: | , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
Nature Portfolio
2023-12-01
|
Series: | Scientific Reports |
Online Access: | https://doi.org/10.1038/s41598-023-48836-5 |
_version_ | 1797398037468807168 |
---|---|
author | Arafa H. Aly B. A. Mohamed M. Al-Dossari D. Mohamed |
author_facet | Arafa H. Aly B. A. Mohamed M. Al-Dossari D. Mohamed |
author_sort | Arafa H. Aly |
collection | DOAJ |
description | Abstract The present research deals with the extremely sensitive temperature-sensing capabilities of defective one-dimensional photonic crystal structures (Si/PS/SiO2). The proposed structure is realized by putting a defective layer of material silicon Dioxide (SiO2) in the middle of a structure consisting of alternating layers of silicon (Si) and porous silica (PS). The transfer matrix method has been employed to examine the transmission characteristics of the proposed defective one-dimensional photonic crystal in addition to MATLAB software. The transmission spectra of the proposed structure in the visible light domain are computed throughout a temperature range of 25–900 °C, and we study the thermal properties related to the defective mode. Additionally, the impacts of changing the defect layer's thickness are examined. Due to the effects of thermal expansion and the thermo-optical coefficient, the defect mode varies significantly as the temperature increases. Our investigation shows that the proposed structure considerably impacts the transmission intensity of the defective mode. The theoretically obtained numeric values of the quality factor and sensitivity are 2216.6 and 0.085 nm/°C, respectively. The challenges presented by conventional temperature sensors could be overcome by the suggested defective photonic crystal sensor. These results are enough to support our claim that the present design can be used as an ultra-sensitive temperature sensor. |
first_indexed | 2024-03-09T01:18:55Z |
format | Article |
id | doaj.art-c5914877fc824820813155e20a726690 |
institution | Directory Open Access Journal |
issn | 2045-2322 |
language | English |
last_indexed | 2024-03-09T01:18:55Z |
publishDate | 2023-12-01 |
publisher | Nature Portfolio |
record_format | Article |
series | Scientific Reports |
spelling | doaj.art-c5914877fc824820813155e20a7266902023-12-10T12:18:05ZengNature PortfolioScientific Reports2045-23222023-12-011311910.1038/s41598-023-48836-5A temperature sensor based on Si/PS/SiO2 photonic crystalsArafa H. Aly0B. A. Mohamed1M. Al-Dossari2D. Mohamed3TH-PPM Group, Physics Department, Faculty of Sciences, Beni-Suef UniversityTH-PPM Group, Physics Department, Faculty of Sciences, Beni-Suef UniversityDepartment of Physics, Faculty of Science, King Khalid UniversityTH-PPM Group, Physics Department, Faculty of Sciences, Beni-Suef UniversityAbstract The present research deals with the extremely sensitive temperature-sensing capabilities of defective one-dimensional photonic crystal structures (Si/PS/SiO2). The proposed structure is realized by putting a defective layer of material silicon Dioxide (SiO2) in the middle of a structure consisting of alternating layers of silicon (Si) and porous silica (PS). The transfer matrix method has been employed to examine the transmission characteristics of the proposed defective one-dimensional photonic crystal in addition to MATLAB software. The transmission spectra of the proposed structure in the visible light domain are computed throughout a temperature range of 25–900 °C, and we study the thermal properties related to the defective mode. Additionally, the impacts of changing the defect layer's thickness are examined. Due to the effects of thermal expansion and the thermo-optical coefficient, the defect mode varies significantly as the temperature increases. Our investigation shows that the proposed structure considerably impacts the transmission intensity of the defective mode. The theoretically obtained numeric values of the quality factor and sensitivity are 2216.6 and 0.085 nm/°C, respectively. The challenges presented by conventional temperature sensors could be overcome by the suggested defective photonic crystal sensor. These results are enough to support our claim that the present design can be used as an ultra-sensitive temperature sensor.https://doi.org/10.1038/s41598-023-48836-5 |
spellingShingle | Arafa H. Aly B. A. Mohamed M. Al-Dossari D. Mohamed A temperature sensor based on Si/PS/SiO2 photonic crystals Scientific Reports |
title | A temperature sensor based on Si/PS/SiO2 photonic crystals |
title_full | A temperature sensor based on Si/PS/SiO2 photonic crystals |
title_fullStr | A temperature sensor based on Si/PS/SiO2 photonic crystals |
title_full_unstemmed | A temperature sensor based on Si/PS/SiO2 photonic crystals |
title_short | A temperature sensor based on Si/PS/SiO2 photonic crystals |
title_sort | temperature sensor based on si ps sio2 photonic crystals |
url | https://doi.org/10.1038/s41598-023-48836-5 |
work_keys_str_mv | AT arafahaly atemperaturesensorbasedonsipssio2photoniccrystals AT bamohamed atemperaturesensorbasedonsipssio2photoniccrystals AT maldossari atemperaturesensorbasedonsipssio2photoniccrystals AT dmohamed atemperaturesensorbasedonsipssio2photoniccrystals AT arafahaly temperaturesensorbasedonsipssio2photoniccrystals AT bamohamed temperaturesensorbasedonsipssio2photoniccrystals AT maldossari temperaturesensorbasedonsipssio2photoniccrystals AT dmohamed temperaturesensorbasedonsipssio2photoniccrystals |