Contact Engineering Approach to Improve the Linearity of Multilevel Memristive Devices
Physical mechanisms underlying the multilevel resistive tuning over seven orders of magnitude in structures based on TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> bilayers, sandwiched between platinum electrodes, are responsible for the nonlinear dependence of the c...
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-12-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/12/12/1567 |
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| author | Natalia Andreeva Dmitriy Mazing Alexander Romanov Marina Gerasimova Dmitriy Chigirev Victor Luchinin |
| author_facet | Natalia Andreeva Dmitriy Mazing Alexander Romanov Marina Gerasimova Dmitriy Chigirev Victor Luchinin |
| author_sort | Natalia Andreeva |
| collection | DOAJ |
| description | Physical mechanisms underlying the multilevel resistive tuning over seven orders of magnitude in structures based on TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> bilayers, sandwiched between platinum electrodes, are responsible for the nonlinear dependence of the conductivity of intermediate resistance states on the writing voltage. To improve the linearity of the electric-field resistance tuning, we apply a contact engineering approach. For this purpose, platinum top electrodes were replaced with aluminum and copper ones to induce the oxygen-related electrochemical reactions at the interface with the Al<sub>2</sub>O<sub>3</sub> switching layer of the structures. Based on experimental results, it was found that electrode material substitution provokes modification of the physical mechanism behind the resistive switching in TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> bilayers. In the case of aluminum electrodes, a memory window has been narrowed down to three orders of magnitude, while the linearity of resistance tuning was improved. For copper electrodes, a combination of effects related to metal ion diffusion with oxygen vacancies driven resistive switching was responsible for a rapid relaxation of intermediate resistance states in TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> bilayers. |
| first_indexed | 2024-03-10T03:32:39Z |
| format | Article |
| id | doaj.art-c5927513fa5f46e1b87ae8f07c959896 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T03:32:39Z |
| publishDate | 2021-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-c5927513fa5f46e1b87ae8f07c9598962023-11-23T09:37:08ZengMDPI AGMicromachines2072-666X2021-12-011212156710.3390/mi12121567Contact Engineering Approach to Improve the Linearity of Multilevel Memristive DevicesNatalia Andreeva0Dmitriy Mazing1Alexander Romanov2Marina Gerasimova3Dmitriy Chigirev4Victor Luchinin5Department of Micro- and Nanoelectronics, St. Petersburg Electrotechnical University ‘LETI’, Saint Petersburg 197376, RussiaDepartment of Micro- and Nanoelectronics, St. Petersburg Electrotechnical University ‘LETI’, Saint Petersburg 197376, RussiaDepartment of Micro- and Nanoelectronics, St. Petersburg Electrotechnical University ‘LETI’, Saint Petersburg 197376, RussiaDepartment of Micro- and Nanoelectronics, St. Petersburg Electrotechnical University ‘LETI’, Saint Petersburg 197376, RussiaDepartment of Micro- and Nanoelectronics, St. Petersburg Electrotechnical University ‘LETI’, Saint Petersburg 197376, RussiaDepartment of Micro- and Nanoelectronics, St. Petersburg Electrotechnical University ‘LETI’, Saint Petersburg 197376, RussiaPhysical mechanisms underlying the multilevel resistive tuning over seven orders of magnitude in structures based on TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> bilayers, sandwiched between platinum electrodes, are responsible for the nonlinear dependence of the conductivity of intermediate resistance states on the writing voltage. To improve the linearity of the electric-field resistance tuning, we apply a contact engineering approach. For this purpose, platinum top electrodes were replaced with aluminum and copper ones to induce the oxygen-related electrochemical reactions at the interface with the Al<sub>2</sub>O<sub>3</sub> switching layer of the structures. Based on experimental results, it was found that electrode material substitution provokes modification of the physical mechanism behind the resistive switching in TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> bilayers. In the case of aluminum electrodes, a memory window has been narrowed down to three orders of magnitude, while the linearity of resistance tuning was improved. For copper electrodes, a combination of effects related to metal ion diffusion with oxygen vacancies driven resistive switching was responsible for a rapid relaxation of intermediate resistance states in TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> bilayers.https://www.mdpi.com/2072-666X/12/12/1567multilevel memristormetal oxide thin filmsatomic layer depositioncontact engineering |
| spellingShingle | Natalia Andreeva Dmitriy Mazing Alexander Romanov Marina Gerasimova Dmitriy Chigirev Victor Luchinin Contact Engineering Approach to Improve the Linearity of Multilevel Memristive Devices Micromachines multilevel memristor metal oxide thin films atomic layer deposition contact engineering |
| title | Contact Engineering Approach to Improve the Linearity of Multilevel Memristive Devices |
| title_full | Contact Engineering Approach to Improve the Linearity of Multilevel Memristive Devices |
| title_fullStr | Contact Engineering Approach to Improve the Linearity of Multilevel Memristive Devices |
| title_full_unstemmed | Contact Engineering Approach to Improve the Linearity of Multilevel Memristive Devices |
| title_short | Contact Engineering Approach to Improve the Linearity of Multilevel Memristive Devices |
| title_sort | contact engineering approach to improve the linearity of multilevel memristive devices |
| topic | multilevel memristor metal oxide thin films atomic layer deposition contact engineering |
| url | https://www.mdpi.com/2072-666X/12/12/1567 |
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