Contact Engineering Approach to Improve the Linearity of Multilevel Memristive Devices

Contact Engineering Approach to Improve the Linearity of Multilevel Memristive Devices

Physical mechanisms underlying the multilevel resistive tuning over seven orders of magnitude in structures based on TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> bilayers, sandwiched between platinum electrodes, are responsible for the nonlinear dependence of the c...

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Bibliographic Details
Main Authors: Natalia Andreeva, Dmitriy Mazing, Alexander Romanov, Marina Gerasimova, Dmitriy Chigirev, Victor Luchinin
Format: Article
Language:English
Published: MDPI AG 2021-12-01
Series:Micromachines
Subjects:
multilevel memristor
metal oxide thin films
atomic layer deposition
contact engineering
Online Access:https://www.mdpi.com/2072-666X/12/12/1567

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