Double MgO-Based Perpendicular Magnetic Tunnel Junction for Artificial Neuron
A perpendicular spin transfer torque (p-STT)-based neuron was developed for a spiking neural network (SNN). It demonstrated the integration behavior of a typical neuron in an SNN; in particular, the integration behavior corresponding to magnetic resistance change gradually increased with the input s...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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Frontiers Media S.A.
2020-04-01
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| Series: | Frontiers in Neuroscience |
| Subjects: | |
| Online Access: | https://www.frontiersin.org/article/10.3389/fnins.2020.00309/full |
| _version_ | 1818526461264396288 |
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| author | Dong Won Kim Woo Seok Yi Jin Young Choi Kei Ashiba Jong Ung Baek Han Sol Jun Jae Joon Kim Jea Gun Park Jea Gun Park |
| author_facet | Dong Won Kim Woo Seok Yi Jin Young Choi Kei Ashiba Jong Ung Baek Han Sol Jun Jae Joon Kim Jea Gun Park Jea Gun Park |
| author_sort | Dong Won Kim |
| collection | DOAJ |
| description | A perpendicular spin transfer torque (p-STT)-based neuron was developed for a spiking neural network (SNN). It demonstrated the integration behavior of a typical neuron in an SNN; in particular, the integration behavior corresponding to magnetic resistance change gradually increased with the input spike number. This behavior occurred when the spin electron directions between double Co2Fe6B2 free and pinned layers in the p-STT-based neuron were switched from parallel to antiparallel states. In addition, a neuron circuit for integrate-and-fire operation was proposed. Finally, pattern-recognition simulation was performed for a single-layer SNN. |
| first_indexed | 2024-12-11T06:23:19Z |
| format | Article |
| id | doaj.art-c59e2334f1be4a29adb6a1da731f6785 |
| institution | Directory Open Access Journal |
| issn | 1662-453X |
| language | English |
| last_indexed | 2024-12-11T06:23:19Z |
| publishDate | 2020-04-01 |
| publisher | Frontiers Media S.A. |
| record_format | Article |
| series | Frontiers in Neuroscience |
| spelling | doaj.art-c59e2334f1be4a29adb6a1da731f67852022-12-22T01:17:45ZengFrontiers Media S.A.Frontiers in Neuroscience1662-453X2020-04-011410.3389/fnins.2020.00309517092Double MgO-Based Perpendicular Magnetic Tunnel Junction for Artificial NeuronDong Won Kim0Woo Seok Yi1Jin Young Choi2Kei Ashiba3Jong Ung Baek4Han Sol Jun5Jae Joon Kim6Jea Gun Park7Jea Gun Park8Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, South KoreaDepartment of Creative IT Engineering, Pohang University of Science and Technology, Pohang, South KoreaMRAM Center, Department of Electronics and Computer Engineering, Hanyang University, Seoul, South KoreaWafer Engineering Department, SUMCO Corporation, Imari, JapanDepartment of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, South KoreaDepartment of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, South KoreaDepartment of Creative IT Engineering, Pohang University of Science and Technology, Pohang, South KoreaDepartment of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, South KoreaWafer Engineering Department, SUMCO Corporation, Imari, JapanA perpendicular spin transfer torque (p-STT)-based neuron was developed for a spiking neural network (SNN). It demonstrated the integration behavior of a typical neuron in an SNN; in particular, the integration behavior corresponding to magnetic resistance change gradually increased with the input spike number. This behavior occurred when the spin electron directions between double Co2Fe6B2 free and pinned layers in the p-STT-based neuron were switched from parallel to antiparallel states. In addition, a neuron circuit for integrate-and-fire operation was proposed. Finally, pattern-recognition simulation was performed for a single-layer SNN.https://www.frontiersin.org/article/10.3389/fnins.2020.00309/fullneuromorphicMRAMspiking neuronspiking neural networkartificial neuron |
| spellingShingle | Dong Won Kim Woo Seok Yi Jin Young Choi Kei Ashiba Jong Ung Baek Han Sol Jun Jae Joon Kim Jea Gun Park Jea Gun Park Double MgO-Based Perpendicular Magnetic Tunnel Junction for Artificial Neuron Frontiers in Neuroscience neuromorphic MRAM spiking neuron spiking neural network artificial neuron |
| title | Double MgO-Based Perpendicular Magnetic Tunnel Junction for Artificial Neuron |
| title_full | Double MgO-Based Perpendicular Magnetic Tunnel Junction for Artificial Neuron |
| title_fullStr | Double MgO-Based Perpendicular Magnetic Tunnel Junction for Artificial Neuron |
| title_full_unstemmed | Double MgO-Based Perpendicular Magnetic Tunnel Junction for Artificial Neuron |
| title_short | Double MgO-Based Perpendicular Magnetic Tunnel Junction for Artificial Neuron |
| title_sort | double mgo based perpendicular magnetic tunnel junction for artificial neuron |
| topic | neuromorphic MRAM spiking neuron spiking neural network artificial neuron |
| url | https://www.frontiersin.org/article/10.3389/fnins.2020.00309/full |
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