Double MgO-Based Perpendicular Magnetic Tunnel Junction for Artificial Neuron

Double MgO-Based Perpendicular Magnetic Tunnel Junction for Artificial Neuron

A perpendicular spin transfer torque (p-STT)-based neuron was developed for a spiking neural network (SNN). It demonstrated the integration behavior of a typical neuron in an SNN; in particular, the integration behavior corresponding to magnetic resistance change gradually increased with the input s...

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Bibliographic Details
Main Authors: Dong Won Kim, Woo Seok Yi, Jin Young Choi, Kei Ashiba, Jong Ung Baek, Han Sol Jun, Jae Joon Kim, Jea Gun Park
Format: Article
Language:English
Published: Frontiers Media S.A. 2020-04-01
Series:Frontiers in Neuroscience
Subjects:
neuromorphic
MRAM
spiking neuron
spiking neural network
artificial neuron
Online Access:https://www.frontiersin.org/article/10.3389/fnins.2020.00309/full

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