Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor
This study optimized the field plate (FP) design (i.e., the number and positions of FP layers) of p-GaN power high-electron-mobility transistors (HEMTs) on the basic of simulations conducted using the technology computer-aided design software of Silvaco. Devices with zero, two, and three FP layers w...
Main Authors: | , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2022-09-01
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Series: | Micromachines |
Subjects: | |
Online Access: | https://www.mdpi.com/2072-666X/13/9/1554 |