Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor
This study optimized the field plate (FP) design (i.e., the number and positions of FP layers) of p-GaN power high-electron-mobility transistors (HEMTs) on the basic of simulations conducted using the technology computer-aided design software of Silvaco. Devices with zero, two, and three FP layers w...
Main Authors: | Chia-Hao Liu, Chong-Rong Huang, Hsiang-Chun Wang, Yi-Jie Kang, Hsien-Chin Chiu, Hsuan-Ling Kao, Kuo-Hsiung Chu, Hao-Chung Kuo, Chih-Tien Chen, Kuo-Jen Chang |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2022-09-01
|
Series: | Micromachines |
Subjects: | |
Online Access: | https://www.mdpi.com/2072-666X/13/9/1554 |
Similar Items
-
Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors
by: Idriss Abid, et al.
Published: (2022-09-01) -
High Threshold Voltage Normally off Ultra-Thin-Barrier GaN MISHEMT with MOCVD-Regrown Ohmics and Si-Rich LPCVD-SiNx Gate Insulator
by: Hsiang-Chun Wang, et al.
Published: (2020-05-01) -
Improving the High-Temperature Gate Bias Instabilities by a Low Thermal Budget Gate-First Process in p-GaN Gate HEMTs
by: Catherine Langpoklakpam, et al.
Published: (2023-02-01) -
The Understanding and Compact Modeling of Reliability in Modern Metal–Oxide–Semiconductor Field-Effect Transistors: From Single-Mode to Mixed-Mode Mechanisms
by: Zixuan Sun, et al.
Published: (2024-01-01) -
Comprehensive Schottky Barrier Height Behavior and Reliability Instability with Ni/Au and Pt/Ti/Pt/Au on AlGaN/GaN High-Electron-Mobility Transistors
by: Surajit Chakraborty, et al.
Published: (2022-01-01)