PVD growth of spiral pyramid-shaped WS2 on SiO2/Si driven by screw dislocations
Atomically thin layered transition metal dichalcogenides (TMDs), such as MoS2 and WS2, have been getting much attention recently due to their interesting electronic and optoelectronic properties. Especially, spiral TMDs provide a variety of candidates for examining the light-matter interaction resul...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Frontiers Media S.A.
2023-03-01
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| Series: | Frontiers in Chemistry |
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| Online Access: | https://www.frontiersin.org/articles/10.3389/fchem.2023.1132567/full |
| _version_ | 1811160321284374528 |
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| author | Yassine Madoune DingBang Yang Yameen Ahmed Mansour M. Al-Makeen Han Huang |
| author_facet | Yassine Madoune DingBang Yang Yameen Ahmed Mansour M. Al-Makeen Han Huang |
| author_sort | Yassine Madoune |
| collection | DOAJ |
| description | Atomically thin layered transition metal dichalcogenides (TMDs), such as MoS2 and WS2, have been getting much attention recently due to their interesting electronic and optoelectronic properties. Especially, spiral TMDs provide a variety of candidates for examining the light-matter interaction resulting from the broken inversion symmetry, as well as the potential new utilization in functional optoelectronic, electromagnetic and nanoelectronics devices. To realize their potential device applications, it is desirable to achieve controlled growth of these layered nanomaterials with a tunable stacking. Here, we demonstrate the Physical Vapor Deposition (PVD) growth of spiral pyramid-shaped WS2 with ∼200 μm in size and the interesting optical properties via AFM and Raman spectroscopy. By controlling the precursors concentration and changing the initial nucleation rates in PVD growth, WS2 in different nanoarchitectures can be obtained. We discuss the growth mechanism for these spiral-patterned WS2 nanostructures based on the screw dislocations. This study provides a simple, scalable approach of screw dislocation-driven (SDD) growth of distinct TMD nanostructures with varying morphologies, and stacking. |
| first_indexed | 2024-04-10T05:56:33Z |
| format | Article |
| id | doaj.art-c5c44bab4497481a8729bd81c30dcdf1 |
| institution | Directory Open Access Journal |
| issn | 2296-2646 |
| language | English |
| last_indexed | 2024-04-10T05:56:33Z |
| publishDate | 2023-03-01 |
| publisher | Frontiers Media S.A. |
| record_format | Article |
| series | Frontiers in Chemistry |
| spelling | doaj.art-c5c44bab4497481a8729bd81c30dcdf12023-03-03T16:30:35ZengFrontiers Media S.A.Frontiers in Chemistry2296-26462023-03-011110.3389/fchem.2023.11325671132567PVD growth of spiral pyramid-shaped WS2 on SiO2/Si driven by screw dislocationsYassine Madoune0DingBang Yang1Yameen Ahmed2Mansour M. Al-Makeen3Han Huang4Hunan Key Laboratory of Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, ChinaHunan Key Laboratory of Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, ChinaDepartment of Electrical and Computer Engineering, University of Victoria, Victoria, BC, CanadaHunan Key Laboratory of Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, ChinaHunan Key Laboratory of Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, ChinaAtomically thin layered transition metal dichalcogenides (TMDs), such as MoS2 and WS2, have been getting much attention recently due to their interesting electronic and optoelectronic properties. Especially, spiral TMDs provide a variety of candidates for examining the light-matter interaction resulting from the broken inversion symmetry, as well as the potential new utilization in functional optoelectronic, electromagnetic and nanoelectronics devices. To realize their potential device applications, it is desirable to achieve controlled growth of these layered nanomaterials with a tunable stacking. Here, we demonstrate the Physical Vapor Deposition (PVD) growth of spiral pyramid-shaped WS2 with ∼200 μm in size and the interesting optical properties via AFM and Raman spectroscopy. By controlling the precursors concentration and changing the initial nucleation rates in PVD growth, WS2 in different nanoarchitectures can be obtained. We discuss the growth mechanism for these spiral-patterned WS2 nanostructures based on the screw dislocations. This study provides a simple, scalable approach of screw dislocation-driven (SDD) growth of distinct TMD nanostructures with varying morphologies, and stacking.https://www.frontiersin.org/articles/10.3389/fchem.2023.1132567/fullspiral patternstungsten disulfidephysical vapor depositionRaman spectrascrew-dislocation driven growth |
| spellingShingle | Yassine Madoune DingBang Yang Yameen Ahmed Mansour M. Al-Makeen Han Huang PVD growth of spiral pyramid-shaped WS2 on SiO2/Si driven by screw dislocations Frontiers in Chemistry spiral patterns tungsten disulfide physical vapor deposition Raman spectra screw-dislocation driven growth |
| title | PVD growth of spiral pyramid-shaped WS2 on SiO2/Si driven by screw dislocations |
| title_full | PVD growth of spiral pyramid-shaped WS2 on SiO2/Si driven by screw dislocations |
| title_fullStr | PVD growth of spiral pyramid-shaped WS2 on SiO2/Si driven by screw dislocations |
| title_full_unstemmed | PVD growth of spiral pyramid-shaped WS2 on SiO2/Si driven by screw dislocations |
| title_short | PVD growth of spiral pyramid-shaped WS2 on SiO2/Si driven by screw dislocations |
| title_sort | pvd growth of spiral pyramid shaped ws2 on sio2 si driven by screw dislocations |
| topic | spiral patterns tungsten disulfide physical vapor deposition Raman spectra screw-dislocation driven growth |
| url | https://www.frontiersin.org/articles/10.3389/fchem.2023.1132567/full |
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