Molecular beam epitaxy of Cd3As2 on a III-V
substrate

Molecular beam epitaxy of Cd3As2 on a III-V substrate

Epitaxial, strain-engineered Dirac semimetal heterostructures promise tuning of the unique properties of these materials. In this study, we investigate the growth of thin films of the recently discovered Dirac semimetal Cd3As2 by molecula...

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Bibliographic Details
Main Authors:	Timo Schumann, Manik Goyal, Honggyu Kim, Susanne Stemmer
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2016-12-01
Series:	APL Materials
Online Access:	http://dx.doi.org/10.1063/1.4972999

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