Si-Doped HfO<sub>2</sub>-Based Ferroelectric Tunnel Junctions with a Composite Energy Barrier for Non-Volatile Memory Applications

Si-Doped HfO<sub>2</sub>-Based Ferroelectric Tunnel Junctions with a Composite Energy Barrier for Non-Volatile Memory Applications

Ferroelectric tunnel junctions (FTJs) have attracted attention as devices for advanced memory applications owing to their high operating speed, low operating energy, and excellent scalability. In particular, hafnia ferroelectric materials are very promising because of their high remanent polarizatio...

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Bibliographic Details
Main Authors: Yoseop Lee, Sungmun Song, Woori Ham, Seung-Eon Ahn
Format: Article
Language:English
Published: MDPI AG 2022-03-01
Series:Materials
Subjects:
FTJ
ferroelectric
non-volatile memory
Online Access:https://www.mdpi.com/1996-1944/15/6/2251

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